Mapping the Energetics of Defect States in CuZnSnS films and the Impact of Sb Doping.

The sub-bandgap levels associated with defect states in CuZnSnS (CZTS) thin films are investigated by correlating the temperature dependence of the absorber photoluminescence (PL) with the device admittance spectroscopy. CZTS thin films are prepared by thermolysis of molecular precursors incorporating chloride salts of the cations and thiourea. Na and Sb are introduced as dopants in the precursor layers to assess their impact on Cu/Zn and Sn site disorder, respectively.

Single Molecular Precursor Solution for CuIn(S,Se) Thin Films Photovoltaic Cells: Structure and Device Characteristics.

A single molecular precursor solution is described for the deposition of CuIn(S,Se) (CIS) film onto Mo-coated glass substrates by spin coating, followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrates the formation of a highly homogeneous and compact 1.1 μm thick CIS layer, with a MoSe under-layer.