Publications by authors named "Tridip Rabha"
Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbICl Perovskite for RRAM Application.
ACS Appl Mater Interfaces
September 2020
Article Synopsis
- Halide perovskite materials are being researched for their potential in resistive switching memory devices due to properties like current-voltage hysteresis and easy fabrication.
- Five compositions of Cl-doped RbPbI films were created, showing that increased Cl concentration leads to improved conductivity.
- The device with 20% Cl substitution showed excellent performance in on/off ratio, endurance, and storage capacity, with conductive atomic force microscopy revealing that the switching mechanism relies on the formation of conductive filaments due to iodine vacancies.