Publications by authors named "Tran C Phong"

Density functional theory (DFT) combined with the Viennasimulation package (VASP) was used to investigate the electronic, magnetic, and optical properties of one-dimensional stanene nanoribbons (SnNRs) and Na, Mg, and Al-adsorbed SnNRs. The SnNRs, with a width of 10 Sn atoms and hydrogen-passivated edges, retained their hexagonal honeycomb structure after structural optimization. Both pristine and adsorbed SnNRs exhibit narrow band gap semiconducting behavior, with pristine SnNRs being non-magnetic and adsorbed SnNRs showing non-zero magnetic moments.

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This study addresses the effect of electron-phonon coupling (EPC) on the electro-optical properties of gated β-borophene. The focus is on how EPC influences the orbital hybridization of boron atoms, particularly within the Bariśic-Labbe-Friedel-Su-Schrieffer-Heeger framework, and considers the role of gate electrodes in this process. The results reveal a redshift in the optical spectrum only when there is positive feedback from one electrode on EPC.

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This study investigates the optical absorption of monolayer phosphorene, focusing on its response to the electron-phonon coupling (EPC) and an electric field. Using a tight-binding Hamiltonian model based on the Barišic-Labbe-Friedel-Su-Schrieffer-Heeger model and the Kubo formula, we calculate the electronic band structure and optical absorption characteristics. The anisotropic dispersion of carriers along armchair and zigzag directions leads to distinct optical responses.

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The recently uncovered two-dimensional materials serve as versatile building blocks for electronic devices. In this study, we methodically investigate the impact of substrate-induced strain and exchange field effects on the electronic density of states (EDOS) and electronic heat capacity (EHC) of single-layer β-borophene. Utilizing the Green's function approach, we compute these functions.

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Article Synopsis
  • This study focuses on comparing the strength of electron-acoustic-phonon (EAP) interactions in symmetrical and asymmetrical quantum wells (QWs) made from GaAs and GaN materials.* -
  • The researchers used a method that calculates the strength of these interactions by analyzing the absorption peak associated with cyclotron resonance (CR) and found that this strength is influenced by factors like electron temperature, external magnetic field, and confined potential frequency.* -
  • Key findings indicate that EAP interaction strengths are generally stronger in symmetric QWs compared to asymmetric ones, and that GaN exhibits greater interaction strength than GaAs in both types of QWs.*
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In this work, the perturbation-induced phase transitions in noncentrosymmetric quantum spin Hall insulators (QSHIs) are analytically addressed. In particular, the dilute charged impurity, the electric field, and the Zeeman splitting field are considered within the tight-binding Hamiltonian model, Green's function approach, and the Born approximation. Following thesymmetry breaking in the PbBiI compound as a representative QSHI, the band gap becomes larger via the electric field, while the system transits to the semimetallic phase via the dilute charged impurities and Zeeman field, modifying the degenerate states in the electronic density of states.

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Article Synopsis
  • The study focuses on the electronic heat capacity (EHC) and Pauli spin paramagnetic susceptibility (PSPS) of SnTe (001) thin films, particularly investigating the effects of dilute charged impurities using an effective Hamiltonian model.
  • By employing the Boltzmann method and Green's function approach, researchers analyze how impurity concentration and scattering affect the electronic density of states.
  • The findings reveal a band gap opening due to hybridization between surfaces and demonstrate that impurity variations lead to midgap states, breaking symmetry and challenging the Fermi liquid theory, with significant implications for SnTe (001) thin film applications.
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Being able to tune the anisotropic interband transitions in phosphorene at finite temperature offers an enormous amount of possibilities in finding new insights in the optoelectronic community. To contribute to this goal we propose a Zeeman spin-splitting field aiming at absorbing various frequencies of the incident light. Employing the tight-binding Hamiltonian to describe the carrier dynamics and the Kubo formalism to formulate the orientation-dependent interband optical conductivity (IOC) and optical activity of phosphorene we investigate the absorption and scattering mechanisms in phosphorene depending on the Zeeman field strength and optical energy parameters.

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In this paper, we have concentrated on the orbital and hybridization effects induced by applied triaxial strain on the interband optical conductivity (IOC) of phosphorene using a two-band Hamiltonian model, linear response theory and the Kubo formula. In particular, we study the dependence of the electronic band structure and of the IOC of a phosphorene single layer on the modulus and direction of the applied triaxial strain. The triaxial strain is included in a model through the introduction of strain-dependent hopping parameters using the Harrison rule.

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