High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition.

Homoepitaxial Si films have been deposited at a high rate of 200 nm s over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1-0.

High throughput production of nanocomposite SiO powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

Nanocomposite Si/SiO powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h. The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO vapors, followed by disproportionation reaction of nucleated SiO nanoparticles.