Enhanced Exciton-Exciton Collisions in an Ultraflat Monolayer MoSe Prepared through Deterministic Flattening.

Squeezing bubbles and impurities out of interlayer spaces by applying force through a few-layer graphene capping layer leads to van der Waals heterostructures with the ultraflat structure free from random electrostatic potential arising from charged impurities. Without the graphene capping layer, a squeezing process with an AFM tip induces applied-force-dependent charges of Δ ∼ 2 × 10 cm μN, resulting in the significant intensity of trions in photoluminescence spectra of MoSe at low temperature. We found that a hBN/MoSe/hBN prepared with the "graphene-capping-assisted AFM nano-squeezing method" shows a strong excitonic emission with negligible trion peak, and the residual line width of the exciton peak is only 2.

Microscopic Mechanism of Van der Waals Heteroepitaxy in the Formation of MoS/hBN Vertical Heterostructures.

Recent studies have revealed that van der Waals (vdW) heteroepitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to the formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes a strong limitation on the crystal orientation of grains is still not understood yet. In this work, we have focused on investigating the microscopic mechanism of the self-alignment of MoS grains in vdW epitaxial growth on hBN.

Quantifying the spreading resistance of an anisotropic thin film conductor.

Recently, highly anisotropic conductors, such as multilayer graphene, have been attracting much attention. The local resistivity can be determined by measuring the contact resistance; however, the theoretical expressions of contact resistance have been developed for isotropic slabs but have not been well developed for highly anisotropic film conductors. We obtain theoretical expressions of the spreading resistance below the circular contact for a highly anisotropic film on a bulk slab.

Gas-Source CVD Growth of Atomic Layered WS from WF and HS Precursors with High Grain Size Uniformity.

Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because of their potential for post-silicon device applications, as well as for exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) of WS using the gaseous precursors WF and HS, augmented by the Na-assistance method. When Na was present during growth, the process created triangle-shaped WS crystals that were 10 μm in size and exhibited semiconducting characteristics.

Atomic structures of the defective SrTiO3 (001) surface.

Surface structures of defective SrTiO(3) (001) have been studied by using scanning probe microscopy and density functional theory calculations. We observed several defective surface structures with true atomic resolution under reducing ultrahigh vacuum conditions. It is found that all the defects are terminated by (001), (100) and (010) microfacets of the TiO(2) plane.

Surface structures of rutile TiO2 (011).

Surface structures of rutile TiO(2) (011) are determined by a combination of noncontact atomic force microscopy (NC-AFM), scanning tunneling microscopy (STM), and density functional calculations. The surface exhibits rowlike (n x 1) structures running along the [01] direction. Microfaceting missing-row structural models can explain the experimental results very well.

Microfaceting explains complicated structures on rutile TiO2 surfaces.

Surface structures on rutile TiO2 (001) have been studied by using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional calculations. Prior investigations have observed many kinds of complicated surface structures; however, detailed atomic structures and the mechanism of the reconstructions are still unknown. We evaluate the energetical stability of the surface structures.