Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation.

In this study, the effects of bismuth (Bi) irradiation on InAs quantum dot (QD) lasers operating in the telecommunication wavelength band were investigated. Highly stacked InAs QDs were grown on an InP(311)B substrate under Bi irradiation, and a broad-area laser was fabricated. In the lasing operation, the threshold currents were almost the same, regardless of Bi irradiation at room temperature.

High-speed fiber-wireless-fiber system in the 100-GHz band using a photonics-enabled receiver and optical phase modulator.

This Letter describes a high-speed yet simple fiber-wireless-fiber system in the 100-GHz band using a photonics-enabled receiver and optical phase modulator. At the antenna site, a millimeter-wave signal is down-converted to the microwave band using an electronic mixer with a local oscillator signal generated remotely using photonic technology. The down-converted signal is converted to an optical signal using an optical phase modulator.