Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe-CrI Heterojunction.

Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI-WSe-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI-FLG-hBN heterostructure was also fabricated on identical CrI and FLGs for better comparison.

[Case control study on anatomical locking plate and ordinary steel plate for the treatment of closed calcaneal fracture with SandersⅡand Ⅲ].

Objective: To compare clinical efficacy between anatomical locking plate (ALP) and ordinary steel plate (OSP) in treating closed calcaneal fractures with SandersⅡ and Ⅲ.

Methods: From May 2016 to May 2018, 68 patients with closed Sanders typeⅡ and Ⅲ calcaneal fractures were retrospectively analyzed, and were divided into anatomical locking plate group (ALP group) and ordinary steel plate group (OSP group) according to two kinds of plate fixation, and 34 patients in each group. In ALP group, there were 21 males and 13 females aged from 20 to 63 years old with average of (35.

Noise-insensitive discriminative subspace fuzzy clustering.

Discriminative subspace clustering (DSC) can make full use of linear discriminant analysis (LDA) to reduce the dimension of data and achieve effective clustering high-dimension data by clustering low-dimension data in discriminant subspace. However, most existing DSC algorithms do not consider the noise and outliers that may be contained in data sets, and when they are applied to the data sets with noise or outliers, and they often obtain poor performance due to the influence of noise and outliers. In this paper, we address the problem of the sensitivity of DSC to noise and outlier.

Single-Photon Emission from Point Defects in Aluminum Nitride Films.

Quantum technologies require robust and photostable single-photon emitters. Here, room temperature operated single-photon emissions from isolated defects in aluminum nitride (AlN) films are reported. AlN films were grown on nanopatterned sapphire substrates by metal organic chemical vapor deposition.

Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask.

A novel method is proposed to realize coordinated stress management and dislocation control in GaN growth on Si (111) substrates. This method is facilely implemented by using a unique carbon nanotube (CNT) mask with a nanoscale diameter and a high fill factor. It is found that most dislocations are directly blocked by high-density nanovoids formed around CNTs within 150 nm from the GaN/AlN interface.

Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes.

Research on hexagonal boron nitride (hBN) has been intensified recently due to the application of hBN as a promising system of single-photon emitters. To date, the single photon origin remains under debate even though many experiments and theoretical calculations have been performed. We have measured the pressure-dependent photoluminescence (PL) spectra of hBN flakes at low temperatures by using a diamond anvil cell device.

Effect of dipole polarization orientation on surface plasmon coupling with green emitting quantum wells by cathodoluminescence.

Ag nanoparticles (NPs) are fabricated on the cross-section of green emitting quantum wells (QWs). The effect of the dipole polarization orientation on the localized surface plasmon (LSP)-QW coupling can be studied by setting the incident direction of the electron beam parallel to the plane of the QWs. Cathodoluminescence (CL) measurements on the QWs show that the intensity with the Ag NPs is enhanced 6.

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence.

We analyzed the coupling behavior between the localized surface plasmon (LSP) and quantum wells (QWs) using cathodoluminescence (CL) in a green light-emitting diodes (LED) with Ag nanoparticles (NPs) filled in photonic crystal (PhC) holes. Photoluminescence (PL) suppression and CL enhancement were obtained for the same green LED sample with the Ag NP array. Time-resolved PL (TRPL) results indicate strong coupling between the LSP and the QWs.

Investigation on strain relaxation distribution in GaN-based μLEDs by Kelvin probe force microscopy and micro-photoluminescence.

GaN/InGaN multi-quantum-wells (MQWs) micron light emitting diodes (µLEDs) with the size ranging from 10 to 300 µm are fabricated. Effects of strain relaxation on the performance of µLEDs have been investigated both experimentally and numerically. Kelvin probe force microscopy (KPFM) and micro-photoluminescence (µPL) are used to characterize the strained area on micron pillars.

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges.

The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping.

Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The optical polarization properties of the conventional and staggered AlGaN QWs are investigated by a theoretical model based on the k·p method as well as polarized photoluminescence (PL) measurements. Based on an analysis of the valence subbands and momentum matrix elements, it is found that AlGaN QWs with step-function-like Al content in QWs offers much stronger TE polarized emission in comparison to that from conventional AlGaN QWs.

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays.

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one.

Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

Angular distribution of polarized light and its effect on light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated in this paper. A united picture is presented to describe polarized light's emission and propagation processes. It is found that the electron-hole recombinations in AlGaN multiple quantum wells produce three kinds of angularly distributed polarized emissions and propagation process can change their intensity distributions.

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

A novel nanoheteroepitaxy method, namely, the grouped and multistep nanoheteroepitaxy (GM-NHE), is proposed to attain a high-quality gallium nitride (GaN) epilayer by metal-organic vapor phase epitaxy. This method combines the effects of sub-100 nm nucleation and multistep lateral growth by using a low-cost but unique carbon nanotube mask, which consists of nanoscale growth windows with a quasi-periodic 2D fill factor. It is found that GM-NHE can facilely reduce threading dislocation density (TDD) and modulate residual stress on foreign substrate without any regrowth.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography.

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED.

[The electroluminescence spectra of InGan/GaN blue LEDs during aging time].

The luminescence spectra of InGaN/GaN multiple quantum wells light-emitting diodes under low level injection current (<4 mA) during aging process was investigated for the first time. Comparing the electroluminescence (EL) spectra of LEDs before and after aging time it was found that the peak wavelength and the full width at half maximum (FWHM) decreased with stress time and the changes of EL spectrum had two different stages-drastic decrease at the early stress stage and slow decrease later showing the same trend with the output optical power of LEDs, which indicates that the effective polarization electric field of LEDs becomes weak during the aging process and the change has a clear correlation with the increase of the defects in the multiple quantum wells of LEDs. Electrical measurement revealed that junction capacitance (C(j)) under the same junction voltage (V(j) = 1.

Resonant absorption and scattering suppression of localized surface plasmons in Ag particles on green LED.

The metallic-structure dependent localized surface plasmons (LSPs) coupling behaviors with InGaN QWs in a green LED epitaxial wafer are investigated by optical transmission, scanning electron microscopy (SEM) and photoluminescence (PL) measurements. Ag nanoparticles (NPs) are formed by thermal annealing Ag layer on the green LED wafer. SEM images show that for higher annealing temperature and/or thicker deposited Ag layer, larger Ag NPs can be produced, leading to the redshift of absorption peaks in the transmission spectra.

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage InGaN/GaN SRL on the structure, electrical and optical characteristics of GaN-based LEDs were investigated. The analysis of strain effect on recombination rate based k·p method indicated 12.

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.

The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization.

Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.

The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. As a result, the staggered QWs have much stronger TE-polarized emission than conventional AlGaN-based QWs, which can enhance the surface emission of deep ultraviolet (DUV) light-emitting diodes (LEDs).

[Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].

In the present paper, optical characteristics of InGaN/GaN multiple quantum wells light emitting diodes fabricated on the conventional (C-LEDs) and patterned sapphire substrates (PSSLEDs) were investigated by electroluminescence (EL) and photoluminescence (PL). PSSLEDs show higher light output power and smaller full width at half maximum (FWHM) of EL than those of C-LEDs for their better crystalline quality. The FWHM of EL for PSSLEDs exhibits faster broadening as current increases than C-LEDs, while the same broadening of FWHM of PL as excitation power increases is shown in PSSLEDs and C-LEDs, which indicate that there is stronger band filling effect in PSSLEDs caused by relatively higher carrier density in their QWs at the same current injection level.

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE).

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained.