Effect of low-dose radiation on thyroid function and the gut microbiota.

Background: The thyroid-gut axis has a great influence on the maintenance of human health; however, we know very little about the effects of low-dose ionizing radiation (LDR) on thyroid hormone levels and gut microbiota composition.

Aim: To investigate the potential effects of low-dose X-ray radiation to male C57BL/6J mice.

Methods: Peripheral blood was collected for enzyme-linked immunosorbent assay (ELISA), and stool samples were taken for 16S ribosomal RNA (rRNA) gene sequencing after irradiation.

[Case control study on anatomical locking plate and ordinary steel plate for the treatment of closed calcaneal fracture with SandersⅡand Ⅲ].

Objective: To compare clinical efficacy between anatomical locking plate (ALP) and ordinary steel plate (OSP) in treating closed calcaneal fractures with SandersⅡ and Ⅲ.

Methods: From May 2016 to May 2018, 68 patients with closed Sanders typeⅡ and Ⅲ calcaneal fractures were retrospectively analyzed, and were divided into anatomical locking plate group (ALP group) and ordinary steel plate group (OSP group) according to two kinds of plate fixation, and 34 patients in each group. In ALP group, there were 21 males and 13 females aged from 20 to 63 years old with average of (35.

[The electroluminescence spectra of InGan/GaN blue LEDs during aging time].

The luminescence spectra of InGaN/GaN multiple quantum wells light-emitting diodes under low level injection current (<4 mA) during aging process was investigated for the first time. Comparing the electroluminescence (EL) spectra of LEDs before and after aging time it was found that the peak wavelength and the full width at half maximum (FWHM) decreased with stress time and the changes of EL spectrum had two different stages-drastic decrease at the early stress stage and slow decrease later showing the same trend with the output optical power of LEDs, which indicates that the effective polarization electric field of LEDs becomes weak during the aging process and the change has a clear correlation with the increase of the defects in the multiple quantum wells of LEDs. Electrical measurement revealed that junction capacitance (C(j)) under the same junction voltage (V(j) = 1.

[Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].

In the present paper, optical characteristics of InGaN/GaN multiple quantum wells light emitting diodes fabricated on the conventional (C-LEDs) and patterned sapphire substrates (PSSLEDs) were investigated by electroluminescence (EL) and photoluminescence (PL). PSSLEDs show higher light output power and smaller full width at half maximum (FWHM) of EL than those of C-LEDs for their better crystalline quality. The FWHM of EL for PSSLEDs exhibits faster broadening as current increases than C-LEDs, while the same broadening of FWHM of PL as excitation power increases is shown in PSSLEDs and C-LEDs, which indicate that there is stronger band filling effect in PSSLEDs caused by relatively higher carrier density in their QWs at the same current injection level.

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE).