Si-waveguide-based optical power monitoring of a 2 × 2 Mach-Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter.

Transparent in-line optical power monitoring in Si programmable photonic integrated circuits (PICs) is indispensable for calibrating integrated optical devices such as optical switches and resonators. A Si waveguide (WG) photodetector (PD) based on defect-mediated photodetection is a promising candidate for a transparent in-line optical power monitor, owing to its simplicity and ease of integration with a fully complementary metal-oxide-semiconductor (CMOS)-compatible process. Here, we propose a simple optical power monitoring scheme for a 2 × 2 Mach-Zehnder interferometer (MZI) optical switch based on InGaAsP/Si hybrid MOS optical phase shifters.

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide.

A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as BaTiO offer nonvolatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor fabs is limited. HfZrO is an emerging ferroelectric material, which exhibits complementary metal-oxide-semiconductor compatibility.

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths.

A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high responsivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than 10A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor operating at a 1.