High gain hybrid graphene-organic semiconductor phototransistors.

Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a photoresist-free recipe to create large-area graphene transistors made out of graphene grown by chemical vapor deposition.

Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field.

We experimentally study the electronic spin transport in hexagonal BN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 μm even at room temperature.

Measurement of collective dynamical mass of Dirac fermions in graphene.

Individual electrons in graphene behave as massless quasiparticles. Unexpectedly, it is inferred from plasmonic investigations that electrons in graphene must exhibit a non-zero mass when collectively excited. The inertial acceleration of the electron collective mass is essential to explain the behaviour of plasmons in this material, and may be directly measured by accelerating it with a time-varying voltage and quantifying the phase delay of the resulting current.

Spin transport in high-quality suspended graphene devices.

We measure spin transport in high mobility suspended graphene (μ ≈ 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (τ(s) ≈ 150 ps) and spin relaxation length (λ(s) = 4.7 μm) for intrinsic graphene.

Reversible hydrogenation and bandgap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy.

The effects of hydrogenation on the topography and electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using an Ar/H(2) plasma. By analyzing thousands of scanning tunneling spectroscopy measurements it is determined that the hydrogen chemisorption on the surface of graphite/graphene opens on average an energy bandgap of 0.

Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene.

By mechanical exfoliation, it is possible to deposit atomically thin mica flakes down to single-monolayer thickness on SiO2/Si wafers. The optical contrast of these mica flakes on top of a SiO2/Si substrate depends on their thickness, the illumination wavelength, and the SiO2 substrate thickness, and can be quantitatively accounted for by a Fresnel-law-based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin, defect-free insulating substrates, dielectric barriers, or planar electron-tunneling junctions.

Anisotropic spin relaxation in graphene.

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular to the graphene layer.

Charge transport in a single superconducting tin nanowire encapsulated in a multiwalled carbon nanotube.

The charge transport properties of single superconducting tin nanowires encapsulated by multiwalled carbon nanotubes have been investigated by multiprobe measurements. The multiwalled carbon nanotube protects the tin nanowire from oxidation and shape fragmentation and therefore allows us to investigate the electronic properties of stable wires with diameters as small as 25 nm. The transparency of the contact between the Ti/Au electrode and nanowire can be tuned by argon ion etching the multiwalled nanotube.

Electronic spin drift in graphene field-effect transistors.

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n approximately 3.5 x 10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as +/- 50%.

Electronic spin transport and spin precession in single graphene layers at room temperature.

Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport, supercurrent transport has also been observed.

c-Axis optical sum rule and a possible new collective mode in La2-xSrxCuO4.

We present the c-axis optical conductivity sigma(1c)(omega,T) of underdoped (x=0.12) and optimally doped (x=0.15) La2-xSrxCuO4 from 4 meV to 1.