Interaction Effects in a 1D Flat Band at a Topological Crystalline Step Edge.

Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the topological crystalline insulator. Using scanning tunneling microscopy and spectroscopy, we investigate the behavior of such edge channels in PbSnSe under doping. Once the energy position of the step edge is brought close to the Fermi level, we observe the opening of a correlation gap.

Systematic Investigation of the Coupling between One-Dimensional Edge States of a Topological Crystalline Insulator.

The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator Pb_{0.7}Sn_{0.3}Se(001) has been studied systematically by scanning tunneling spectroscopy.

Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene.

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy.

Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures.

The "double Dirac cone" 2D topological interface states found on the (001) faces of topological crystalline insulators such as PbSnSe feature degeneracies located away from time reversal invariant momenta and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultrahigh vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood.

Robust spin-polarized midgap states at step edges of topological crystalline insulators.

Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover the existence of one-dimensional (1D) midgap states at odd-atomic surface step edges of the three-dimensional topological crystalline insulator (Pb,Sn)Se. A minimal toy model and realistic tight-binding calculations identify them as spin-polarized flat bands connecting two Dirac points.

Paramagnetism of cobalt-doped ZnO nanoparticles obtained by microwave solvothermal synthesis.

Zinc oxide nanopowders doped with 1-15 mol % cobalt were produced by the microwave solvothermal synthesis (MSS) technique. The obtained nanoparticles were annealed at 800 °C in nitrogen (99.999%) and in synthetic air.

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy.

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated. (In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {11̅00} side facets of the cores at much lower temperature (220 °C). High-resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure.

The mechanism of Bi nanowire growth from Bi/Co immiscible composite thin films.

Single crystalline Bi nanowires were grown by extrusion from Bi/Co thin films. The films were obtained by thermal evaporation in high vacuum. The average diameter, length and density of obtained nanowires were 100 nm, 30 microm and 6.