Modulation-doped CdTe quantum wells (QWs) with CdMgTe barriers were studied by photoluminescence (PL) and far-infrared Fourier spectroscopy under a magnetic field at 4.2 K and by Raman spectroscopy at room temperature. Two samples were tested: a sample which contained ten QWs (MQW) and a sample with one QW (SQW).
View Article and Find Full Text PDFWe investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick InAlAs designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditions which were developed for the growth of cascaded InGaAs/InAlAs active region, e.
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