Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin Films.

The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositions of chalcogenide thin films from Ga-Sb-Te system (tie-lines GaSb-GaTe and GaSb-Te). The thin films are deposited by radiofrequency magnetron sputtering using GaSb, GaTe, and Te targets.

Linear and nonlinear optical properties of co-sputtered Ge-Sb-Se amorphous thin films.

Amorphous Ge-Sb-Se thin films were co-sputtered from ${{\rm GeSe}_4}$GeSe and ${{\rm Sb}_2}{{\rm Se}_3}$SbSe targets. Depending on the film composition, linear optical properties were studied by ellipsometry. The Kerr coefficient and two-photon absorption coefficient were estimated using Sheik-Bahae's formalism for co-sputtered films of ${{\rm GeSe}_4} {\text -} {\rm Sb}_2{{\rm Se}_3}$GeSe-SbSe compared to ${{\rm GeSe}_2}{\text -}{\rm Sb}_2{{\rm Se}_3}$GeSe-SbSe pseudo-binary system and ${{\rm As}_2}{{\rm Se}_3}$AsSe as reference.

GaTe-SbTe thin-films phase change characteristics.

A radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm Sb}_2 {\rm Te}_3$SbTe targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (${\sim}{10.0 {-} 26.

Mass spectrometric investigation of amorphous Ga-Sb-Se thin films.

Amorphous chalcogenide thin films are widely studied due to their enhanced properties and extensive applications. Here, we have studied amorphous Ga-Sb-Se chalcogenide thin films prepared by magnetron co-sputtering, via laser ablation quadrupole ion trap time-of-flight mass spectrometry. Furthermore, the stoichiometry of the generated clusters was determined which gives information about individual species present in the plasma plume originating from the interaction of amorphous chalcogenides with high energy laser pulses.

Intensity mediated change in the sign of ultrafast third-order nonlinear optical response in AsS thin films.

We study experimentally and theoretically the intensity-dependent off-resonant ultrafast third-order nonlinear optical response of AsS thin films. At low intensity, we observed saturable absorption with a negative (self-defocusing) nonlinear refractive index (n) which at higher intensity switched over to reverse saturable absorption with a change in the sign of n to positive (self-focusing). Our findings constitute compelling evidence on how to dynamically tune the optical response with the intensity that has its origin in the combined effect of two-photon absorption and Pauli blocking.

Laser Desorption Ionization of AsCh (Ch = S, Se, and Te) Chalcogenides Using Quadrupole Ion Trap Time-of-Flight Mass Spectrometry: A Comparative Study.

Laser desorption ionization using time-of-flight mass spectrometer afforded with quadrupole ion trap was used to study AsCh (Ch = S, Se, and Te) bulk chalcogenide materials. The main goal of the study is the identification of species present in the plasma originating from the interaction of laser pulses with solid state material. The generated clusters in both positive and negative ion mode are identified as 10 unary (S and As ) and 34 binary (As S ) species for AsS glass, 2 unary (Se ) and 26 binary (As Se ) species for AsSe glass, 7 unary (Te ) and 23 binary (As Te ) species for AsTe material.