Publisher Correction: The photoelastic coefficient P of H implanted GaAs as a function of defect density.

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The photoelastic coefficient P of H implanted GaAs as a function of defect density.

The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.

Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy.

The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices.

Giant enhancement of hydrogen transport in rutile TiO2 at low temperatures.

Measurements of the O-H and O-D vibrational lifetimes show that the room-temperature hydrogen diffusion rate in rutile TiO2 can be enhanced by 9 orders of magnitude when stimulated by resonant infrared light. We find that the local oscillatory motion of the proton quickly couples to a wag-mode-assisted classical transfer process along the c channel with a jump rate of greater than 1 THz and a barrier height of 0.2 eV.

Proton tunneling: a decay channel of the O-H stretch mode in KTaO3.

The vibrational lifetimes of the O-H and O-D stretch modes in the perovskite oxide KTaO3 are measured by pump-probe infrared spectroscopy. Both stretch modes are exceptionally long lived and exhibit a large "reverse" isotope effect, due to a phonon-assisted proton-tunneling process, which involves the O-Ta-O bending motion. The excited-state tunneling rate is found to be 7 orders of magnitude larger than from the ground state in the proton conducting oxide, BaCeO3 [Phys.

Kinetics of a collagen-like polypeptide fragmentation after mid-IR free-electron laser ablation.

Tissue ablation with mid-infrared irradiation tuned to collagen vibrational modes results in minimal collateral damage. The hypothesis for this effect includes selective scission of protein molecules and excitation of surrounding water molecules, with the scission process currently favored. In this article, we describe the postablation infrared spectral decay kinetics in a model collagen-like peptide (Pro-Pro-Gly)(10).

Low-frequency electromagnetic field effects on functional groups in human skin keratinocytes cells revealed by IR-SNOM.

Human HaCaT cells, exposed for 24 h to a 1 mT (rms) 50 Hz sinusoidal magnetic field in a temperature-regulated solenoid, suffer detectable changes in their biochemical properties and shapes. By using infrared wavelength-selective scanning near-field optical microscopy, we observed changes in the distribution of the inner chemical functional groups and in the cell morphology with a resolution of 80-100 nm.

Infrared scanning near-field optical microscopy investigates order and clusters in model membranes.

Due to its surface sensitivity and high spatial resolution, scanning near-field optical microscopy (SNOM) has a significant potential to study the lateral organization of membrane domains and clusters. Compared to other techniques, infrared near-field microscopy in the spectroscopic mode has the advantage to be sensitive to specific chemical bonds. In fact, spectroscopic SNOM in the infrared spectral range (IR-SNOM) reveals the chemical content of the sample with a lateral resolution around 100 nm (Cricenti et al.

Desorption of H from Si(111) by resonant excitation of the Si-H vibrational stretch mode.

Past efforts to achieve selective bond scission by vibrational excitation have been thwarted by energy thermalization. Here we report resonant photodesorption of hydrogen from a Si(111) surface using tunable infrared radiation. The wavelength dependence of the desorption yield peaks at 0.

Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors.

Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e.

Very high resolution chemical imaging with Infrared Scanning Near-field Optical Microscopy (IR-SNOM).

In this paper we present chemically highly resolved images obtained with Scanning Near-field Optical Microscopy (SNOM) coupled with an Infrared (IR) Free Electron Laser (FEL) at Vanderbilt University, Nashville, USA. Main principles governing SNOM imaging as well as essential components of the experimental setup are described. Chemically resolved images showing the distribution of different phases within the boron-nitride films are presented.

Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium.

Decay dynamics of local vibrational modes provides unique information about energy relaxation processes to solid-state phonon bath. In this Letter the lifetimes of the asymmetric stretch mode of interstitial 16O and 17O isotopes in Si are measured at 10 K directly by time-resolved, transient bleaching spectroscopy to be 11.5 and 4.

Chemically resolved imaging of biological cells and thin films by infrared scanning near-field optical microscopy.

The infrared (IR) absorption of a biological system can potentially report on fundamentally important microchemical properties. For example, molecular IR profiles are known to change during increases in metabolic flux, protein phosphorylation, or proteolytic cleavage. However, practical implementation of intracellular IR imaging has been problematic because the diffraction limit of conventional infrared microscopy results in low spatial resolution.

Time-resolved, light scattering measurements of cartilage and cornea denaturation due to free electron laser radiation.

Light scattering is used to monitor the dynamics and energy thresholds of laser-induced structural alterations in biopolymers due to irradiation by a free electron laser (FEL) in the infrared (IR) wavelength range 2.2 to 8.5 microm.

Energy response of an imaging plate exposed to standard beta sources.

Imaging plates (IPs) are a reusable media, which when exposed to ionizing radiation, store a latent image that can be read out with a red laser as photostimulated luminescence (PSL). They are widely used as a substitute for X-ray films for diagnostic studies. In diagnostic radiology this technology is known as computed radiography.

Structure-dependent vibrational lifetimes of hydrogen in silicon.

The lifetimes of the Si-H vibrational stretch modes of the H(*)(2) ( 2062 cm(-1)) and HV.VH((110)) ( 2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature.

Lifetimes of hydrogen and deuterium related vibrational modes in silicon.

Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes.

Spectroscopic scanning near-field optical microscopy with a free electron laser: CH2 bond imaging in diamond films.

Hydrogen chemistry in thin films and biological systems is one of the most difficult experimental problems in today's science and technology. We successfully tested a novel solution, based on the spectroscopic version of scanning near-field optical microscopy (SNOM). The tunable infrared radiation of the Vanderbilt free electron laser enabled us to reveal clearly hydrogen-decorated grain boundaries on nominally hydrogen-free diamond films.

Local vibrational modes of isolated hydrogen in germanium.

Two distinct isolated hydrogen defects are observed in crystalline Ge by in situ infrared absorption spectroscopy. Implantation of protons into Ge at cryogenic temperatures gives rise to two intense absorption lines at 745 and 1794 cm(-1). The lines originate from distinct defects, each of which contains one H atom located on a <111> axis.

Vibrational lifetime of bond-center hydrogen in crystalline silicon.

The lifetime of the stretch mode of bond-center hydrogen in crystalline silicon is measured to be T1 = 7.8+/-0.2 ps with time-resolved, transient bleaching spectroscopy.

Laser ablation as a function of the primary absorber in dentin.

Background And Objective: Infrared transmission spectra of dentin reveal a broad absorption band between 6.0 and 7.0 microns composed of absorption peaks of water, collagen and carbonated hydroxyapatite.