Vertically Aligned One-Dimensional Crystal-Structured SbSe for High-Efficiency Flexible Solar Cells Regulating Selenization Kinetics.

Recently, antimony selenide (SbSe) has exhibited an exciting potential for flexible photoelectric applications due to its unique one-dimensional (1D) chain-type crystal structure, low-cost constituents, and superior optoelectronic properties. The 1D structure endows SbSe with a strong anisotropy in carrier transport and a lasting mechanical deformation tolerance. The control of the crystalline orientation of the SbSe film is an essential requirement for its device performance optimization.

Liquid-Phase van der Waals Epitaxy of a Few-Layer and Unit-Cell Thick Ruddlesden-Popper Halide Perovskite.

2D Ruddlesden-Popper (RP) halide perovskites with natural multiple quantum well structures are an ideal platform to integrate into vertical heterostructures, which may introduce plentiful intriguing optoelectronic properties that are not accessible in a single bulk crystal. Here, we report liquid-phase van der Waals epitaxy of a 2D RP hybrid perovskite (4,4-DFPD)PbI (4,4-DFPD is 4,4-difluoropiperidinium) on muscovite mica and fabricate a series of perovskite-perovskite vertical heterostructures by integrating it with a second 2D RP perovskite R-NPB [NPB = 1-(1-naphthyl)ethylammonium lead bromide] sheets. The grown (4,4-DFPD)PbI nanobelt array can be multiple layers to unit-cell thin and are crystallographically aligned on the mica substrate.

Giant pyroelectricity in nanomembranes.

Pyroelectricity describes the generation of electricity by temporal temperature change in polar materials. When free-standing pyroelectric materials approach the 2D crystalline limit, how pyroelectricity behaves remained largely unknown. Here, using three model pyroelectric materials whose bonding characters along the out-of-plane direction vary from van der Waals (InSe), quasi-van der Waals (CsBiNbO) to ionic/covalent (ZnO), we experimentally show the dimensionality effect on pyroelectricity and the relation between lattice dynamics and pyroelectricity.

Orientation-Controlled Large-Area Epitaxial PbI Thin Films with Tunable Optical Properties.

Lead iodide (PbI) as a layered material has emerged as an excellent candidate for optoelectronics in the visible and ultraviolet regime. Micrometer-sized flakes synthesized by mechanical exfoliation from bulk crystals or by physical vapor deposition have shown a plethora of applications from low-threshold lasing at room temperature to high-performance photodetectors with large responsivity and faster response. However, large-area centimeter-sized growth of epitaxial thin films of PbI with well-controlled orientation has been challenging.

Growth front smoothing effects in extremely high pressure vapor deposition.

Recent experimental chemical vapor depositions of silicon at extreme pressures of ~ 50 MPa (~ 500 atm) have been observed to generate remarkably smooth surfaces not predicted by low-pressure deposition models. In this paper, we propose an anti-shadowing mechanism where the collision of particles within the valleys of the surface growth front leads to smoothening. We conduct Monte Carlo simulations to simulate the evolution of film roughness at pressures between 1 and 50 MPa.

High-Crystallinity Epitaxial SbSe Thin Films on Mica for Flexible Near-Infrared Photodetectors.

The V-VI binary chalcogenide, SbSe, has attracted considerable attention for its applications in thin film optoelectronic devices because of its unique 1D structure and remarkable optoelectronic properties. Herein, we report an SbSe thin film epitaxially grown on a flexible mica substrate through a relatively weak (van der Waals) interaction by vapor transport deposition. The epitaxial SbSe thin films exhibit a single (120) out-of-plane orientation and a 0.

A chiral switchable photovoltaic ferroelectric 1D perovskite.

Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral.

A Reconfigurable Remotely Epitaxial VO Electrical Heterostructure.

The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits. VO has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, the reconfigurable VO-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high-quality VO in technologically important substrates.

Publisher Correction: Carrier lifetime enhancement in halide perovskite via remote epitaxy.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Chemical reaction induced carrier localization in nanometer-thin Al/Ru, Al/Co, and Al/Mo superlattices.

It is well-known that the electrical conductivity of a metallic film reduces dramatically when the film becomes very thin. This effect is mainly attributed to surface scattering of the conducting carriers. In a multilayer structure, interface scattering also reduces the conductance, but chemical reactions at the interfaces can have equal or bigger effects.

Carrier lifetime enhancement in halide perovskite via remote epitaxy.

Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the 'defects-tolerant' halide perovskite is largely unknown.

Remote Phononic Effects in Epitaxial Ruddlesden-Popper Halide Perovskites.

Despite their weak nature, van der Waals (vdW) interactions have been shown to effectively control the optoelectronic and vibrational properties of layered materials. However, how vdW effects exist in Ruddlesden-Popper layered halide perovskites remains unclear. Here we reveal the role of interlayer vdW force in Ruddlesden-Popper perovskite in regulating phase-transition kinetics and carrier dynamics based on high-quality epitaxial single-crystalline (CHNH)PbI flakes with controlled dimensions.

Remote epitaxy of copper on sapphire through monolayer graphene buffer.

In this work, we show that remote heteroepitaxy can be achieved when Cu thin film is grown on single crystal, monolayer graphene buffered sapphire(0001) substrate via a thermal evaporation process. X-ray diffraction and electron backscatter diffraction data show that the epitaxy process forms a prevailing Cu crystal domain, which is remotely registered in-plane to the sapphire crystal lattice below the monolayer graphene, with the (111) out-of-plane orientation. As a poor metal with zero density of states at its Fermi level, monolayer graphene cannot totally screen out the stronger charge transfer/metallic interactions between Cu and substrate atoms.

Defect-engineered epitaxial VO in strain engineering of heterogeneous soft crystals.

The success of strain engineering has made a step further for the enhancement of material properties and the introduction of new physics, especially with the discovery of the critical roles of strain in the heterogeneous interface between two dissimilar materials (for example, FeSe/SrTiO). On the other hand, the strain manipulation has been limited to chemical epitaxy and nanocomposites that, to a large extent, limit the possible material systems that can be explored. By defect engineering, we obtained, for the first time, dense three-dimensional strongly correlated VO epitaxial nanoforest arrays that can be used as a novel "substrate" for dynamic strain engineering, due to its metal-insulator transition.

van der Waals Epitaxy of Antimony Islands, Sheets, and Thin Films on Single-Crystalline Graphene.

Antimony (Sb) nanostructures, including islands, sheets, and thin films, of high crystallinity were epitaxially grown on single-crystalline graphene through van der Waals interactions. Two types of graphene substrates grown by chemical vapor deposition were used, the as-grown graphene on Cu(111)/ c-sapphire and the transferred graphene on SiO/Si. On the as-grown graphene, deposition of ultrathin Sb resulted in two growth modes and associated morphologies of Sb.

Coherent Phonon Transport Measurement and Controlled Acoustic Excitations Using Tunable Acoustic Phonon Source in GHz-sub THz Range with Variable Bandwidth.

We experimentally demonstrated a narrowband acoustic phonon source with simultaneous tunabilities of the centre frequency and the spectral bandwidth in the GHz-sub THz frequency range based on photoacoustic excitation using intensity-modulated optical pulses. The centre frequency and bandwidth are tunable from 65 to 381 GHz and 17 to 73 GHz, respectively. The dispersion of the sound velocity and the attenuation of acoustic phonons in silicon dioxide (SiO) and indium tin oxide (ITO) thin films were investigated using the acoustic phonon source.

Utilizing van der Waals Slippery Interfaces to Enhance the Electrochemical Stability of Silicon Film Anodes in Lithium-Ion Batteries.

High specific capacity anode materials such as silicon (Si) are increasingly being explored for next-generation, high performance lithium (Li)-ion batteries. In this context, Si films are advantageous compared to Si nanoparticle based anodes since in films the free volume between nanoparticles is eliminated, resulting in very high volumetric energy density. However, Si undergoes volume expansion (contraction) under lithiation (delithiation) of up to 300%.

Traditional Semiconductors in the Two-Dimensional Limit.

Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors.

Single-Crystal Graphene-Directed van der Waals Epitaxial Resistive Switching.

Graphene has been broadcasted as a promising choice of electrode and substrate for flexible electronics. To be truly useful in this regime, graphene has to prove its capability in ordering the growth of overlayers at an atomic scale, commonly known as epitaxy. Meanwhile, graphene as a diffusion barrier against atoms and ions has been shown in some metal-graphene-dielectric configurations for integrated circuits.

High-Temperature Ionic Epitaxy of Halide Perovskite Thin Film and the Hidden Carrier Dynamics.

High-temperature vapor phase epitaxy (VPE) has been proved ubiquitously powerful in enabling high-performance electro-optic devices in III-V semiconductor field. A typical example is the successful growth of p-type GaN by VPE for blue light-emitting diodes. VPE excels as it controls film defects such as point/interface defects and grain boundary, thanks to its high-temperature processing condition and controllable deposition rate.

Revealing the Crystalline Integrity of Wafer-Scale Graphene on SiO/Si: An Azimuthal RHEED Approach.

The symmetry of graphene is usually determined by a low-energy electron diffraction (LEED) method when the graphene is on the conductive substrates, but LEED cannot handle graphene transferred to SiO/Si substrates due to the charging effect. While transmission electron microscopy can generate electron diffraction on post-transferred graphene, this method is too localized. Herein, we employed an azimuthal reflection high-energy electron diffraction (RHEED) method to construct the reciprocal space mapping and determine the symmetry of wafer-size graphene both pre- and post-transfer.

Protecting Silicon Film Anodes in Lithium-Ion Batteries Using an Atomically Thin Graphene Drape.

Silicon (Si) shows promise as an anode material in lithium-ion batteries due to its very high specific capacity. However, Si is highly brittle, and in an effort to prevent Si from fracturing, the research community has migrated from the use of Si films to Si nanoparticle based electrodes. However, such a strategy significantly reduces volumetric energy density due to the porosity of Si nanoparticle electrodes.

Epitaxial Halide Perovskite Lateral Double Heterostructure.

Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system.

Photon Transport in One-Dimensional Incommensurately Epitaxial CsPbX Arrays.

One-dimensional nanoscale epitaxial arrays serve as a great model in studying fundamental physics and for emerging applications. With an increasing focus laid on the Cs-based inorganic halide perovskite out of its outstanding material stability, we have applied vapor phase epitaxy to grow well aligned horizontal CsPbX (X: Cl, Br, or I or their mixed) nanowire arrays in large scale on mica substrate. The as-grown nanowire features a triangular prism morphology with typical length ranging from a few tens of micrometers to a few millimeters.