Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances.

Thermoelectric materials convert heat into electricity through thermally driven charge transport in solids or vice versa for cooling. To compete with conventional energy-conversion technologies, a thermoelectric material must possess the properties of both an electrical conductor and a thermal insulator. However, these properties are normally mutually exclusive because of the interconnection between scattering mechanisms for charge carriers and phonons.

Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy.

Lateral piezoresponse force microscopy (L-PFM) is demonstrated as a reliable method for determining the crystallographic polarity of individual, dispersed GaN nanowires that were functional components in electrical test structures. In contrast to PFM measurements of vertically oriented (as-grown) nanowires, where a biased probe tip couples to out-of-plane deformations through the d piezoelectic coefficient, the L-PFM measurements in this study were implemented on horizontally oriented nanowires that coupled to shear deformations through the d coefficient. L-PFM phase-polarity relationships were determined experimentally using a bulk m-plane GaN sample with a known [0001] direction and further indicated that the sign of the d piezoelectric coefficient was negative.

The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion.

The microstructure, polarity and Si distribution in AlN/GaN layers grown by plasma assisted molecular beam epitaxy (PAMBE) on Si(111) was assessed by scanning transmission electron microscopy (STEM). Samples grown under both metal- and nitrogen-rich conditions contained defects at the AlN/Si interface which suggest formation of an Al-Si eutectic. Correlated with this, interfacial segregation of Si was found in the samples.

UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy.

Ultraviolet light-emitting diodes fabricated from N-polar AlGaN/GaN core-shell nanowires (NWs) with p-i-n structure produced electroluminescence at 365 nm with ∼5× higher intensities than similar GaN homojunction LEDs. The improved characteristics were attributed to localization of spontaneous recombination to the NW core, reduction of carrier overflow losses through the NW shell, and elimination of current shunting. Poisson-drift-diffusion modeling indicated that a shell Al mole fraction of x = 0.

Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon.

The crystallographic polarity of AlN grown on Si(111) by plasma assisted molecular beam epitaxy is intentionally inverted from N-polar to Al-polar at a planar boundary. The position of the inversion boundary is controlled by a two-step growth process that abruptly changes from Al-rich to N-rich growth conditions. The polarity inversion is induced by the presence of Si, which is incorporated from an Al-Si eutectic layer that forms during the initial stages of AlN growth and floats on the AlN surface under Al-rich growth conditions.

Structural absorption by barbule microstructures of super black bird of paradise feathers.

Many studies have shown how pigments and internal nanostructures generate color in nature. External surface structures can also influence appearance, such as by causing multiple scattering of light (structural absorption) to produce a velvety, super black appearance. Here we show that feathers from five species of birds of paradise (Aves: Paradisaeidae) structurally absorb incident light to produce extremely low-reflectance, super black plumages.

Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy.

While GaN nanowires (NWs) offer an attractive architecture for a variety of nanoscale optical, electronic, and mechanical devices, defects such as crystal polarity inversion domains (IDs) can limit device performance. Moreover, the formation of such defects during NW growth is not fully understood. In this study, we use transmission electron microscopy (TEM) and atom probe tomography (APT) to investigate the effects of sub-monolayer contamination at the regrowth interface in GaN NWs grown by selective-area molecular beam epitaxy (MBE).

Core-shell GaN nanowire LEDs by N-polar selective area growth.

GaN nanowire LEDs with radial junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio -type NW cores that were not subject to self-shadowing effects during the subsequent growth of a conformal low-temperature Mg:GaN shell. LED devices were fabricated from single-NW and multiple-NW arrays in their as-grown configuration by contacting the -type core through an underlying conductive GaN layer and the -type NW shell via a metallization layer.

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates.

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al-Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity.

Quadrature Demodulation of a Quantum Dot Optical Response to Faint Light Fields.

The amplitude and phase of a material's nonlinear optical response provide insight into the underlying electronic dynamics that determine its optical properties. Phase-sensitive nonlinear spectroscopy techniques are widely implemented to explore these dynamics through demodulation of the complex optical signal field into its quadrature components; however, complete reconstruction of the optical response requires measuring both the amplitude and phase of each quadrature, which is often lost in standard detection methods. Here, we implement a heterodyne-detection scheme to fully reconstruct the amplitude and phase response of spectral hole-burning from InAs/GaAs charged quantum dots.

Comparison of convergent beam electron diffraction and annular bright field atomic imaging for GaN polarity determination.

A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected STEM mode. Both measurements were made at nominally the same locations on a variety of GaN nanowires.

Directional reflectance and milli-scale feather morphology of the African Emerald Cuckoo, Chrysococcyx cupreus.

Diverse plumages have evolved among birds through complex morphological modifications. We investigate how the interplay of light with surface and subsurface feather morphology determines the direction of light propagation, an understudied aspect of avian visual signalling. We hypothesize that milli-scale modifications of feathers produce anisotropic reflectance, the direction of which may be predicted by the orientation of the milli-scale structure.

Measuring spatially- and directionally-varying light scattering from biological material.

Light interacts with an organism's integument on a variety of spatial scales. For example in an iridescent bird: nano-scale structures produce color; the milli-scale structure of barbs and barbules largely determines the directional pattern of reflected light; and through the macro-scale spatial structure of overlapping, curved feathers, these directional effects create the visual texture. Milli-scale and macro-scale effects determine where on the organism's body, and from what viewpoints and under what illumination, the iridescent colors are seen.

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires.

We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD).

Transient corneal microcysts associated with interferon therapy.

Purpose: To report transient corneal epithelial microcysts associated with interferon therapy.

Methods: Case report.

Results: Transient corneal epithelial microcysts appeared bilaterally with the onset of therapy with pegylated interferon and ribavirin for the treatment of hepatitis C.