Optical Tomography of Polymeric Microsphere Layers Using Confocal Raman Microscopy.

In confocal Raman microscopy, depth profiling is a key application that enables analysis of the structural and chemical composition and size of three-dimensional (3D) transparent objects. However, the precise interpretation of a probed sample's Raman depth profile measurement can be significantly affected by both its size and surrounding objects. This study provides a more comprehensive understanding of the observed optical effects at the interface between polymer spheres and different substrates.

Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors.

The laser-induced ablation threshold of c-plane GaN films upon exposure to ultrashort laser pulses was investigated for different wavelengths from the IR to the UV range and pulse widths between 0.34 and 10 ps. The one-pulse ablation threshold ranges between 0.

Confocal Raman Microscopy for the Analysis of the Three-Dimensional Shape of Polymeric Microsphere Layers.

The reconstruction of the three-dimensional (3D) morphology of polymeric microsphere layers based on confocal Raman microscopy was studied. Refraction of the Raman laser beam at the curved surface of the spheres broadens the focus volume inside the sphere. Compared to planar layers, the focus gets trapped inside the spheres such that the measured depth profiles are shifted and broadened.

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode.

Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance. This report demonstrates tunable optimization of inductively coupled plasma reactive ion etching (ICP-RIE) at cryogenic temperature to fabricate vertically-aligned silicon nanowire array anodes with high verticality, controllable morphology, and good homogeneity. Three different materials [i.

Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold.

We study the photoluminescence emission from planar and 3D InGaN/GaN LED structures, excited using a femtosecond laser with fluences close to sample's damage threshold. For a typical laser system consisting of a titanium-sapphire regenerative amplifier, which is pumping an optical parametric amplifier delivering output pulses of a few tens of MW pulse power with ∼100 fs pulse duration, 1 kHz repetition rate and a wavelength of 325 nm, we determine the damage threshold of the InGaN/GaN LEDs to be about 0.05 J/cm.

Intense intrashell luminescence of Eu-doped single ZnO nanowires at room temperature by implantation created Eu-Oi complexes.

Successful doping and excellent optical activation of Eu(3+) ions in ZnO nanowires were achieved by ion implantation. We identified and assigned the origin of the intra-4f luminescence of Eu(3+) ions in ZnO by first-principles calculations to Eu-Oi complexes, which are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 °C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires dominating the photoluminescence spectrum even at room temperature.

Electrochemical reduction of O2 in 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid containing Zn2+ cations: deposition of non-polar oriented ZnO nanocrystalline films.

The influence of the Zn(2+) concentration and temperature on the electrochemical reduction of O(2) in a solution of zinc bis(trifluoromethanesulfonyl)imide (Zn(TFSI)(2)) salt in 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (PYR(14)TFSI) ionic liquid is presented. ZnO nanocrystalline films were then electrodeposited, under enhanced O(2) reduction, at temperatures in the 75-150 °C range. Their morphology, chemical composition, structural and optical properties were analyzed.

The influence of local heating by nonlinear pulsed laser excitation on the transmission characteristics of a ZnO nanowire waveguide.

We perform a transmission experiment on a ZnO nanowire waveguide to study its transmission characteristics under nonlinear femtosecond-pulse excitation. We find that both the second harmonic and the photoluminescence couple into low-order waveguide modes of the nanowires but with distinctly different efficiencies. We measure the transmission spectrum of a single ZnO nanowire waveguide for near-UV light generated by interband recombination processes.

Recombination dynamics of surface-related excitonic states in single ZnO nanowires.

With decreasing diameter the influence of surface-related effects becomes increasingly important for an understanding of the optical properties of semiconductor nanowires. We present time integrated and time resolved photoluminescence studies of single zincoxide nanowires with different diameters. We analyze the changes in the optical spectra for wires with different surface-to-volume ratios, present optical spectra of single wires at different excitation densities, and study the time-resolved dynamics of the surface related and donor-bound exciton related emission lines for a single nanowire at low temperatures.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.

High-order waveguide modes in ZnO nanowires.

We use tapered silica fibers to inject laser light into ZnO nanowires with diameters around 250 nm to study their waveguiding properties. We find that high-order waveguide modes are frequently excited and carry significant intensity at the wire surface. Numerical simulations reproduce the experimental observations and indicate a coupling efficiency between silica and ZnO nanowires of 50%.