Experimental reservoir computing with diffractively coupled VCSELs.

We present experiments on reservoir computing (RC) using a network of vertical-cavity surface-emitting lasers (VCSELs) that we diffractively couple via an external cavity. Our optical reservoir computer consists of 24 physical VCSEL nodes. We evaluate the system's memory and solve the 2-bit XOR task and the 3-bit header recognition (HR) task with bit error ratios (BERs) below 1% and the 2-bit digital-to-analog conversion (DAC) task with a root mean square error (RMSE) of 0.

Injection locking and coupling the emitters of large VCSEL arrays via diffraction in an external cavity.

Networks of semiconductor lasers are the foundation of numerous applications and fundamental investigations in nonlinear dynamics, material processing, lighting, and information processing. However, making the usually narrowband semiconductor lasers within the network interact requires both high spectral homogeneity and a fitting coupling concept. Here, we report how we use diffractive optics in an external cavity to experimentally couple vertical-cavity surface-emitting lasers (VCSELs) in a 5×5 array.

Temperature dependence of refractive indices of AlGaAs and InAlGaAs in the telecommunication spectral range.

In this work, we determine the temperature dependence of refractive indices of InAlGaAs and AlGaAs semiconductor alloys at telecommunication wavelengths in the range from room temperature down to 10 K. For that, we measure the temperature-dependent reflectance of two structures: with an AlGaAs/GaAs distributed Bragg reflector (DBR) designed for 1.3 µm and with an InAlGaAs/InP DBR designed for 1.

Using low-contrast negative-tone PMMA at cryogenic temperatures for 3D electron beam lithography.

We report on a 3D electron beam lithography (EBL) technique using polymethyl methacrylate (PMMA) in the negative-tone regime as a resist. First, we briefly demonstrate 3D EBL at room temperature. Then we concentrate on cryogenic temperatures where PMMA exhibits a low contrast, which allows for straightforward patterning of 3D nano- and microstructures.