InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications.

Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon.

III-V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber.

Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III-V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing high-quality III-V on silicon and realizing functionalities have been a challenge. Here, we propose a design of III-V nanowires on silicon (100) substrates, which are self-assembled with gold plasmonic nanostructures, as a key building block for efficient and functional photodetectors on silicon.

InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode.

Single-photon detection at near-infrared (NIR) wavelengths is critical for light detection and ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle trackers and atmospheric remote sensing. Portable, high-performance LiDAR relies on silicon-based single-photon avalanche diodes (SPADs) because of their extremely low dark count rate (DCR) and afterpulsing probability, but their operation wavelengths are typically limited up to 905 nm. Although InGaAs-InP SPADs offer an alternative platform to extend the operation wavelengths to eye-safe ranges, their high DCR and afterpulsing severely limit their commercial applications.

GaSb-based mid infrared photonic crystal surface emitting lasers.

We demonstrated for the first time above room temperature (RT) GaSb-based mid-infrared photonic crystal surface emitting lasers (PCSELs). The lasers, under optical pumping, emitted at λ(lasing)~2.3μm, had a temperature insensitive line width of 0.