Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.

The crossbar structure of resistive random access memory (RRAM) is the most promising technology for the development of ultrahigh-density devices for future nonvolatile memory. However, only a few studies have focused on the switching phenomenon of crossbar RRAM in detail. The main purpose of this study is to understand the formation and disruption of the conductive filament occurring at the crossbar center by real-time transmission electron microscope observation.

Self-assembled clay films with a platelet-void multilayered nanostructure and flame-blocking properties.

Polymeric composite films with a high loading of nano-size silicates can hardly meet the increasingly stringent fireproof and smoke-free requirements during burning. Thus, it is desirable to prepare pure clay films that can block air, heat, and flame. Here we report an organic-free clay film capable of both flame- and heat-shielding.

(110)-exposed gold nanocoral electrode as low onset potential selective glucose sensor.

A straightforward electrochemical deposition process was developed to grow gold nanostructures, including nanocoral, nanothorn, branched belt, and nanoparticle, on carbon electrodes by reducing HAuCl4 under constant potentials in mixtures containing CTAC and/or NaNO3. Among the nanostructures, the quasi-one-dimensional nanocoral electrode showed the highest surface area. Because of this, it provided excellent electrochemical performances in cyclic voltammetric (CV) studies for kinetic-controlled enzyme-free glucose oxidation reactions.

Growth of pagoda-topped tetragonal copper nanopillar arrays.

Growth of arrays of pagoda-topped tetragonal Cu nanopillar (length 1- 6 mum; width 150 +/- 25 nm) with {100} side faces on Au/glass is achieved by a simple electrochemical reduction of CuCl(2)(aq) by Al(s) in aqueous dodecyltrimethylammonium chloride. Field-emission measurement shows that the Cu nanopillars can emit electrons (10 muA cm(-2)) at a turn-on field of 12.4 V mum(-1) with a calculated field enhancement factor of 713.

Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions.

A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 microm.

Growth of Cu nanobelt and Ag belt-like materials by surfactant-assisted galvanic reductions.

We demonstrate the syntheses of single crystalline Cu nanobelt and Ag belt-like materials via CTAC-assisted (CTAC, cetyltrimethylammonium chloride) galvanic reductions. The single crystalline face-centered cubic phase Cu nanobelt was prepared by reacting CuCl2(aq) with Al(s) in an aqueous solution of CTAC and HNO3. The Cu nanobelt exhibited a high-quality ribbon-like nanostructure with a thickness less than 15 nm, a width of 30-150 nm, and a length up to 10 microm.