High-throughput top-down fabrication of uniform magnetic particles.

Ion Beam Aperture Array Lithography was applied to top-down fabrication of large dense (10(8)-10(9) particles/cm(2)) arrays of uniform micron-scale particles at rates hundreds of times faster than electron beam lithography. In this process, a large array of helium ion beamlets is formed when a stencil mask containing an array of circular openings is illuminated by a broad beam of energetic (5-8 keV) ions, and is used to write arrays of specific repetitive patterns. A commercial 5-micrometer metal mesh was used as a stencil mask; the mesh size was adjusted by shrinking the stencil openings using conformal sputter-deposition of copper.