Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.

GaN-on-diamond device cooling can be enhanced by reducing the effective thermal boundary resistance (TBR) of the GaN/diamond interface. The thermal properties of this interface and of the polycrystalline diamond grown onto GaN using SiN and AlN barrier layers as well as without any barrier layer under different growth conditions are investigated and systematically compared for the first time. TBR values are correlated with transmission electron microscopy analysis, showing that the lowest reported TBR (∼6.

Compact microwave re-entrant cavity applicator for plasma-assisted combustion.

The design and experimental operation of a compact microwave/rf applicator is described. This applicator operates at atmospheric pressure and couples electromagnetic energy into a premixed CH(4)/O(2) flame. The addition of only 2-15 W of microwave power to a premixed combustion flame with a flame power of 10-40 W serves to extend the flammability limits for fuel lean conditions, increases the flame length and intensity, and increases the number density and mixture of excited radical species in the flame vicinity.