The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes.

The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h to 200 nm h.

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al Ga O Sidewalls.

AlGaN and GaN sidewalls were turned into Al Ga O and GaO, respectively, by thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light-emitting diodes (LEDs). The thermally oxidized GaO is a single crystal with nanosized voids homogenously distributed inside the layer. Two oxidized Al Ga O layers were observed on the sidewall of the AlGaN layer in transmission electron microscopy images.