[Raman spectra analysis of bromine doped hydrogenated amorphous carbon (a-C : Br : H) films deposited by RF-PECVD].

Bromine doped hydrogenated amorphous carbon (a-C : Br : H) thin films were deposited on silicon wafers by rf. -plasma enhanced chemical vapor deposition (RF-PECVD) with a frequency of 13.56 MHz at room temperature using pure bromoethane as a precursor of carbon source mixed with hydrogen (H2) as a carrier gas.