Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs.

The coupling effect of negative bias temperature instability (NBTI) and total ionizing dose (TID) was investigated by simulation based on the fully depleted silicon on insulator (FDSOI) PMOS. After simulating the situation of irradiation after NBT stress, it was found that the NBTI effect weakens the threshold degradation of FDSOI PMOS under irradiation. Afterward, NBT stress was decomposed into high gate voltage stress and high-temperature stress, which was applied to the device simultaneously with irradiation.

The Influence of Positional Isomerism of Terminal Alkyl Chains on Mesomorphic and Photophysical Behavior of Unsymmetric α-cyanostilbene-based Tetracatenars.

Two series of unsymmetric α-cyanostilbene-based tetracatenars containing three hexadecyl chains at one end and one alkyl chain with varying lengths at the other end were prepared by using Suzuki coupling and Knoevenagel reactions. These tetracatenars with the terminal three hexadecyl chains, which are adjacent to the cyano group are non-mesogens, whereas the isomers with one alkyl chain, which is adjacent to the cyano group display transition from non-mesogens to monotropic hexagonal columnar liquid crystal upon elongation of the alkyl chain. This transition could be attributed to that the three hexadecyl chains which are adjacent to the cyano group decrease the interactions between π-conjugated rigid cores, hindering the formation of mesophase.

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.

In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that, under the combined influence of these two effects, the circuit's upset threshold and critical charge decreased by 15.4% and 23.

Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress.

In today's digital circuits, Si-based MOS devices have become the most widely used technology in medical, military, aerospace, and aviation due to their advantages of mature technology, high performance, and low cost. With the continuous integration of transistors, the characteristic size of MOSFETs is shrinking. Time-dependent dielectric electrical breakdown (TDDB) is still a key reliability problem of MOSFETs in recent years.

Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit.

The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on-off function of devices. At present, most of the irradiation research on the circuit level is focused on the single event effect, and there is very little research on the total ionizing dose effect. Therefore, this study mainly analyzes the influence of TID effects on a CMOS inverter circuit based on 22 nm FDSOI transistors.

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application.

In this work, a new low voltage-triggered silicon-controlled rectifier named MTSCR is realized in a 65 nm CMOS process for low voltage-integrated circuits electrostatic discharge (ESD) protections. The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to turn on, and then the INMOS drive SCR structure to turn on. Compared with the existing low trigger voltage (V) ESD component named diodes-string-triggered SCR (DTSCR), the MTSCR can realize the same low V characteristic but less area penalty of ~44.

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles.

When semiconductor materials are exposed to radiation fields, cascade collision effects may form between the radiation particles in the radiation field and the lattice atoms in the target material, creating irradiation defects that can lead to degradation or failure of the performance of the device. In fact, 6H-SiC is one of the typical materials for third-generation broadband semiconductors and has been widely used in many areas of intense radiation, such as deep space exploration. In this paper, the irradiation cascade effect between irradiated particles of different energies in the radiation and lattice atoms in 6H-SiC target materials is simulated based on the molecular dynamics analysis method, and images of the microscopic trajectory evolution of PKA and SKA are obtained.

Polarization Gradient Effect of Negative Capacitance LTFET.

In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.