Flexible pressure sensor with metallic reinforcement and graphene nanowalls for wearable electronics device.

In recent years, flexible pressure sensors have been seen widespread adoption in various fields such as electronic skin, smart wearables, and human-computer interaction systems. Owing to the electrical conductivity and adaptability to flexible substrates, vertical graphene nanowalls (VGNs) have recently been recognized as promising materials for pressure-sensing applications. Our study presented the synthesis of high-quality VGNs via plasma enhanced chemical vapor deposition and the incorporation of a metal layer by electron beam evaporation, forming a stacked structure of VGNs/Metal/VGNs.

Direct fabrication of high-quality vertical graphene nanowalls on arbitrary substrates without catalysts for tidal power generation.

The non-catalytic preparation of high-quality vertical graphene nanowalls (VGN) and graphene-based high output power hydrovoltaic effect power generation devices has always been difficult to achieve. In this work, we successfully prepared VGN with defect density, few layers and submicron domain size on a variety of substrates without catalysts through reasonable adjustment of growth conditions by the hot-wire chemical vapor deposition (HWCVD) method. The Raman test of the VGN prepared under optimal conditions showed that its / value was less than 1, and / was more than 2.

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge-Contact.

Nonvolatile phase-change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation.

Near Room-Temperature Synthesis of Vertical Graphene Nanowalls on Dielectrics.

Vertical graphene nanowalls (VGNs) with excellent heat-transfer properties are promising to be applied in the thermal management of electronic devices. However, high growth temperature makes VGNs unable to be directly prepared on semiconductors and polymers, which limits the practical application of VGNs. In this work, the near room-temperature growth of VGNs was realized by utilizing the hot filament chemical vapor deposition method.

Oxidizing Hexagonal Boron Nitride into Fluorescent Structures by Photodissociated Directional Oxygen Radical.

Modifying the wide band gap semiconductor hexagonal boron nitride (hBN) can bring new chances in photonics. By virtue of the solvothermal/hydrothermal oxidation or functionalization, hBN can be converted into fluorescent nanodots. Until now, it has been a big challenge to drily oxidize hBN and turn it into bright fluorescent structures due to its superior chemical stability.

Advanced Data Encryption ​using 2D Materials.

Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences of bits. TRNG circuits with high degree of randomness and low power consumption may be fabricated by using the random telegraph noise (RTN) current signals produced by polarized metal/insulator/metal (MIM) devices as entropy source. However, the RTN signals produced by MIM devices made of traditional insulators, i.

MCCMF: collaborative matrix factorization based on matrix completion for predicting miRNA-disease associations.

Background: MicroRNAs (miRNAs) are non-coding RNAs with regulatory functions. Many studies have shown that miRNAs are closely associated with human diseases. Among the methods to explore the relationship between the miRNA and the disease, traditional methods are time-consuming and the accuracy needs to be improved.

Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride.

The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN.

Vacancy-Assisted Growth Mechanism of Multilayer Hexagonal Boron Nitride on a FeB Substrate.

The controllable synthesis of large-area and uniform hexagonal boron nitride (h-BN) films has been recently achieved on metal-boron alloy catalysts with the use of N feedstock, representing important progress in an economic and environmentally friendly process. However, the systematic investigation of the growth mechanism is still lacking, which impedes the further development of this method. In this work, on the basis of density functional theory (DFT) calculations and experiments, we reveal the vacancy-assisted growth mechanism of h-BN on FeB substrate.

Vapor-liquid-solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates.

Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor-liquid-solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten FeB alloy and N as reactants.

Controlled synthesis of uniform multilayer hexagonal boron nitride films on FeB alloy.

Two-dimensional (2D) hexagonal boron nitride (h-BN) is highly appreciated for its excellent insulating performance and absence of dangling bonds, which could be employed to maintain the intrinsic properties of 2D materials. However, controllable synthesis of large scale multilayer h-BN is still very challenging. Here, we demonstrate chemical vapor deposition (CVD) growth of multilayer h-BN by using iron boride (FeB) alloy and nitrogen (N) as precursors.

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride.

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood.

Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.

Graphene/hexagonal boron nitride (-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/-BN heterostructure is demonstrated on Cu-Ni substrates.

Application of sodium-ion-based solid electrolyte in electrostatic tuning of carrier density in graphene.

Using a solid electrolyte to tune the carrier density in thin-film materials is an emerging technique that has potential applications in both basic and applied research. Until now, only materials containing small ions, such as protons and lithium ions, have been used to demonstrate the gating effect. Here, we report the study of a lab-synthesised sodium-ion-based solid electrolyte, which shows a much stronger capability to tune the carrier density in graphene than previously reported lithium-ion-based solid electrolyte.

Edge control of graphene domains grown on hexagonal boron nitride.

The edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying the ratio of working-gases.

Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches.

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition.

Copper-Vapor-Assisted Rapid Synthesis of Large AB-Stacked Bilayer Graphene Domains on Cu-Ni Alloy.

The synergic effects of Cu85Ni15 and the copper vapor evaporated from copper foil enabled the fast growth of a ≈300 μm bilayer graphene in ≈10 minutes. The copper vapor reduces the growth rate of the first graphene layer while the carbon dissolved in the alloy boosts the growth of the subsequently developed second graphene layer with an AB-stacking order.

Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys.

Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications. At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate. Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate.

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy.

Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils.

Raman enhancement by graphene-Ga2O3 2D bilayer film.

2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process.

Continuous graphene films synthesized at low temperatures by introducing coronene as nucleation seeds.

In this paper, we systematically studied the effects of coronene as nucleation seeds for graphene synthesis at low temperatures by chemical vapor deposition. Naphthalene was used as a solid carbon source which is capable of producing graphene at temperatures down to 300 °C. The experimental results showed clear evidence that coronene seeds work as preferred nucleation sites, through which the nucleation density and graphene domain size could be modulated.