Publications by authors named "Tianjian Ou"
Manipulation of the electronic properties of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Surface charge transfer doping is considered to be a powerful technique to regulate the carrier density of TMDs. Herein, the controllable p-type surface modification of few-layer WSeby FeClLewis acid with different doping concentrations have been achieved.
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- Manipulation of carrier density in transition-metal dichalcogenides (TMDs), particularly MoS, is crucial for electronic and optoelectronic applications.
- The study utilized ionic-liquid-gating (ILG) to inject hydrogen ions (H) into multilayer MoS, leading to nonvolatile n-type doping and improved conductivity, while showing no effect on monolayer MoS.
- The enhanced multilayer MoS was successfully used as contact electrodes in monolayer MoS field effect transistors, improving performance and showcasing the potential of ILG technology in TMDs.