The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser.

In laser processing, due to the short interaction time between an ultrashort pulse laser and silicon, it has been difficult to study the lattice temperature change characteristics of silicon. In this paper, the interaction between a picosecond laser and silicon was studied. Based on the Fokker-Planck equation and two-temperature model (TTM) equation, a simulation model of silicon heating by different pulse-width picosecond lasers was established.