Publications by authors named "Tian-Ran Wei"

The recently discovered metal-like room-temperature plasticity in inorganic semiconductors reshapes our knowledge of the physical properties of materials, giving birth to a series of new-concept functional materials. However, current room-temperature plastic inorganic semiconductors are still very rare, and their performance is inferior to that of classic brittle semiconductors. Taking classic bismuth telluride (BiTe)-based thermoelectric semiconductors as an example, we show that antisite defects can lead to high-density, diverse microstructures that substantially affect mechanical properties and thus successfully transform these bulk semiconductors from brittle to plastic, leading to a high figure of merit of up to 1.

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Inorganic semiconductor materials are crucial for modern technologies, but their brittleness and limited processability hinder the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in some inorganic semiconductors offers a promising solution, but the deformation mechanisms remain controversial. Here, we investigate the deformation of indium selenide, a two-dimensional van der Waals semiconductor with substantial plasticity.

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Article Synopsis
  • * Researchers introduced a liquid-phase sintering method using MgCu nano-sintering aid to enhance grain size and improve thermoelectric performance in Mg(Bi, Sb)-based materials.
  • * The resulting polycrystals displayed exceptional electrical transport characteristics and low thermal conductivity, achieving a thermoelectric figure of merit of 1.5 at 500 K and a conversion efficiency of 7.4% under a 207 K temperature difference, making it a promising strategy for practical applications.
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Stacking two-dimensional (2D) van der Waals (vdW) materials in a layered bulk structure provides an appealing platform for the emergence of exotic physical properties. As a vdW crystal with exceptional plasticity, InSe offers the opportunity to explore various effects arising from the coupling of its peculiar mechanical behaviors and other physical properties. Here, we employ neutron scattering techniques to investigate the correlations of plastic interlayer slip, lattice anharmonicity, and thermal transport in InSe crystals.

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Ductile inorganic thermoelectric (TE) materials open a new approach to develop high-performance flexible TE devices. N-type Ag(S,Se,Te) and p-type AgCu(Se,S,Te) pseudoternary solid solutions are two typical categories of ductile inorganic TE materials reported so far. Comparing with the Ag(S,Se,Te) pseudoternary solid solutions, the phase composition, crystal structure, and physical properties of AgCu(Se,S,Te) pseudoternary solid solutions are more complex, but their relationships are still ambiguous now.

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The recently discovered plastic/ductile inorganic thermoelectric (TE) materials open a new avenue for the fabrication of high-efficiently flexible TE devices, which can utilize the small temperature difference between human body and environment to generate electricity. However, the maximum power factor (PF) of current plastic/ductile TE materials is usually around or less than 10 µW cm K , much lower than the classic brittle TE materials. In this work, a record-high PF of 18.

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Silver sulfide in monoclinic phase (α-Ag2S) has attracted significant attention owing to its metal-like ductility and promising thermoelectric properties near room temperature. However, first-principles studies on this material by density functional theory calculations have been challenging as both the symmetry and atomic structure of α-Ag2S predicted from such calculations are inconsistent with experimental findings. Here, we propose that a dynamical approach is imperative for correctly describing the structure of α-Ag2S.

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Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be promising thermoelectric (TE) materials due to their decent thermoelectric performance. While GeSbTe and GeSbTe have been extensively studied, the TE performance of GeSbTe has not been well explored. Reducing the excessive carrier concentration is crucial to improving TE performance for GeSbTe.

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Black phosphorus (BP) has been demonstrated as a promising electrode material for supercapacitors. Currently, the main limitation of its practical application is the low electrical conductivity and poor structure stability. Hence, BP-based supercapacitors usually severely suffer from low capacitance and poor cycling stability.

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Article Synopsis
  • * Utilizing a high-throughput screening method, the study identified several potential 2D chalcogenide crystals, including well-known materials like MoS, GaSe, and SnSe, that display plastic deformability.
  • * The discovered plasticity in these materials results from unique slip mechanisms that break and reform chemical bonds, opening new possibilities for developing flexible electronic devices.
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Thermoelectric technology provides a promising solution to sustainable energy utilization and scalable power supply. Recently, Ag Q-based (Q = S, Se, Te) silver chalcogenides have come forth as potential thermoelectric materials that are endowed with complex crystal structures, high carrier mobility coupled with low lattice thermal conductivity, and even exceptional plasticity. This review presents the latest advances in this material family, from binary compounds to ternary and quaternary alloys, covering the understanding of multi-scale structures and peculiar properties, the optimization of thermoelectric performance, and the rational design of new materials.

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The recently discovered ductile/plastic inorganic semiconductors pave a new avenue toward flexible thermoelectrics. However, the power factors of current ductile/plastic inorganic semiconductors are usually low (below 5 µW cm  K ) as compared with classic brittle inorganic thermoelectric materials, which greatly limit the electrical output power for flexible thermoelectrics. Here, large plasticity and high power factor in bulk two-dimensional van der Waals (2D vdW) single-crystalline SnSe are reported.

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Flexible thermoelectrics provide a different solution for developing portable and sustainable flexible power supplies. The discovery of silver sulfide-based ductile semiconductors has driven a shift in the potential for flexible thermoelectrics, but the lack of good p-type ductile thermoelectric materials has restricted the reality of fabricating conventional cross-plane π-shaped flexible devices. We report a series of high-performance p-type ductile thermoelectric materials based on the composition-performance phase diagram in AgCu(Se,S,Te) pseudoternary solid solutions, with high figure-of-merit values (0.

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To date, thermoelectric materials research stays focused on optimizing the material's band edge details and disfavors low mobility. Here, the paradigm is shifted from the band edge to the mobility edge, exploring high thermoelectricity near the border of band conduction and hopping. Through coalloying iodine and sulfur, the plain crystal structure is modularized of liquid-like thermoelectric material Cu Te with mosaic nanograins and the highly size mismatched S/Te sublattice that chemically quenches the Cu sublattice and drives the electronic states from itinerant to localized.

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Article Synopsis
  • Wearable touch panels are flexible electronic devices that can detect finger movements and provide feedback, requiring high accuracy and durability.
  • A new flexible temperature sensor made from plastic Ag S shows excellent performance, including a high temperature coefficient of resistance and fast response times, while remaining durable under stress.
  • The innovative design incorporates a sensor array and deep-learning algorithms to enable real-time touch signal detection and interactive feedback on an app, highlighting the potential of high-performance flexible inorganic semiconductors in electronics.
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AgSe is a narrow band gap n-type semiconductor with high carrier mobility and low lattice thermal conductivity. It has high thermoelectric performance near room temperature. However, there is a noticeable data discrepancy for thermoelectric performance in the reported literature studies, which greatly hinders the rational understanding and potential application of this material.

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Hetero-shaped thermoelectric (TE) generators (TEGs) can power the sensors used in safety monitoring systems of undersea oil pipelines, but their development is greatly limited by the lack of materials with both good shape-conformable ability and high TE performance. In this work, a new ductile inorganic TE material, Ag S Te , with high TE performance is reported. At 300-600 K, Ag S Te crystallizes in a body-centered cubic structure, in which S and Te atoms randomly occupy the (0, 0, 1) site.

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Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature.

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Liquid-like materials are one family of promising thermoelectric materials discovered in the past years due to their advantanges of ultrahigh thermoelectric figure of merit (), low cost, and environmental friendliness. However, their practial applications are greatly limited by the low service stability from the Cu/Ag metal deposition under large current and/or temperature gradient. Both high for high efficiency and large critical voltage for good stability are required for liquid-like materials, but they are usually strongly correlated and hard to be tuned individually.

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Article Synopsis
  • The GeSbTe hexagonal compound is a promising phase-change material with good thermoelectric properties, but issues like high carrier concentration and low Seebeck coefficient limit its performance.
  • Researchers introduced indium as a dopant in GeInSbTe to improve electrical properties, resulting in a threefold increase in room-temperature Seebeck coefficient compared to the unmodified material.
  • DFT calculations suggest that indium enhances electronic interactions and bonding, allowing the modified material to achieve a maximum thermoelectric figure of merit (ZT) of 0.78 at 700 K, which is 40% better than the original compound.
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Copper-based chalcogenides have ultralow thermal conductivity and ultrahigh thermoelectric performance, but most of them are p-type semiconductors. It is urgent to develop n-type counterparts for high efficiency thermoelectric modules based on these copper based-chalcogenides. CuSnS is an intrinsically n-type semiconductor with complex crystal structure and low thermal conductivity.

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AgBiSe and AgSbSe, two typical examples of Te-free I-V-VI chalcogenides, are drawing much attention due to their promising thermoelectric performance. Both compounds were synthesized melting and consolidated by spark plasma sintering. The role of annealing on the transport properties of polymorphous AgBiSe and monophase AgSbSe was studied.

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Nanoporous architecture has long been predicted theoretically for its proficiency in suppressing thermal conduction, but less concerned as a practical approach for better thermoelectric materials hitherto probably due to its technical challenges. This article demonstrates a study on nanoporous PbSe-SiO composites fabricated by a facile method of mechanical alloying assisted by subsequent wet-milling and then spark plasma sintering. Owing to the formation of random nanopores and additional interface scattering, the lattice thermal conductivity is limited to a value as low as 0.

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P-type SnS compound and SnSSe solid solutions were prepared by mechanical alloying followed by spark plasma sintering (SPS) and their thermoelectric properties were then studied in different compositions (x = 0.0, 0.2, 0.

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