Atomically Thin Current Pathways in Graphene through Kekulé-O Engineering.

We demonstrate that the current flow in graphene can be guided on atomically thin current pathways by the engineering of Kekulé-O distortions. A grain boundary in these distortions separates the system into topologically distinct regions and induces a ballistic domain-wall state. The state is independent of the orientation of the grain boundary with respect to the graphene sublattice and permits guiding the current on arbitrary paths.

Electron Optics in Phosphorene pn Junctions: Negative Reflection and Anti-Super-Klein Tunneling.

Ballistic electrons in phosphorene pn junctions show optical-like phenomena. Phosphorene is modeled by a tight-binding Hamiltonian that describes its electronic structure at low energies, where the electrons behave in the armchair direction as massive Dirac Fermions and in the orthogonal zigzag direction as Schrödinger electrons. Applying the continuum approximation, we derive the electron optics laws in phosphorene pn junctions, which show very particular and unusual properties.

Robustness of optimal transport in disordered interacting many-body networks.

The robustness of quantum transport under various perturbations is analyzed in disordered interacting many-body systems, which are constructed from the embedded Gaussian random matrix ensembles (EGEs). The transport efficiency can be enhanced drastically, if centrosymmetry (csEGE) is imposed. When the csEGE is perturbed with an ordinary EGE, the transport efficiency in the optimal cases is reduced significantly, while in the suboptimal cases the changes are less pronounced.

Efficient quantum transport in disordered interacting many-body networks.

The coherent transport of n fermions in disordered networks of l single-particle states connected by k-body interactions is studied. These networks are modeled by embedded Gaussian random matrix ensemble (EGE). The conductance bandwidth and the ensemble-averaged total current attain their maximal values if the system is highly filled n∼l-1 and k∼n/2.