Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth.

The synthesis of epitaxially oriented Si nanowires at high growth rates (>1 microm/min) was demonstrated on (111) Si substrates using Al as the catalyst. The use of high H(2) and SiH(4) partial pressures was found to be effective at reducing problems associated with Al oxidation and nanowire nucleation, enabling growth of high aspect ratio structures at temperatures ranging from 500 to 600 degrees C with minimal tapering of the diameter. Because of the high growth rate observed, the Al catalyst is believed to be in the liquid state during the growth.