Air-stable, aluminium oxide encapsulated graphene phototransistors.

Graphene has garnered significant interest in optoelectronics due to its unique properties, including broad wavelength absorption and high mobility. However, its weak stability in ambient conditions requires encapsulation for practical applications. In this study, we investigate graphene CVD-grown field-effect transistors fabricated on Si/SiOwafers, encapsulated with aluminum oxide (AlO) of different thicknesses.

Chemically-Linked Heterostructures of Palladium Nanosheets and 2H-MoS.

The burgeoning field of 2D heterostructures targets the combination of 2D materials with 3D, 1D, or 0D nanomaterials. Among the most popular 2D materials, the 2H polytype of molybdenum disulfide (MoS) features a well-defined bandgap that becomes direct at the monolayer level, which can be exploited for photodetection. A notable limitation of 2H-MoS is its curtailed absorbance beyond the visible range.

Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoSdevices.

Two-dimensional semiconducting materials such as MoShave gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates.

Biodegradable albumen dielectrics for high-mobility MoS phototransistors.

This work demonstrates the fabrication and characterization of single-layer MoS field-effect transistors using biodegradable albumen (chicken eggwhite) as gate dielectric. By introducing albumen as an insulator for MoS transistors high carrier mobilities (up to ~90 cm V s) are observed, which is remarkably superior to that obtained with commonly used SiO dielectric which we attribute to ionic gating due to the formation of an electric double layer in the albumen MoS interface. In addition, the investigated devices are characterized upon illumination, observing responsivities of 4.

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors.

We demonstrate the fabrication of field-effect transistors based on single-layer MoS and a thin layer of BaTiO (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices.