Direct Assessment of Defective Regions in Monolayer MoS Field-Effect Transistors through Scanning Probe Microscopy Measurements.

Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor technology roadmap. Presently, the search for electrically active defects, in terms of both their density of energy states and their spatial distribution, has turned out to be of paramount importance in synthetic transition metal dichalcogenides layers, as they are suspected of severely inhibiting these devices from achieving their highest performance. Although advanced microscopy tools have allowed the direct detection of physical defects such as grain boundaries and point defects, their implementation at the device scale to assess the active defect distribution and their impact on field-induced channel charge modulation and current transport is strictly restrained.

Probe chip nanofabrication enabled reverse tip sample scanning probe microscopy concept and measurements.

We introduce a new scanning probe microscopy (SPM) concept called reverse tip sample scanning probe microscopy (RTS SPM), where the tip and sample positions are reversed as compared to traditional SPM. The main benefit of RTS SPM over the standard SPM configuration is that it allows for simple and fast tip changes. This overcomes two major limitations of SPM which are slow data acquisition and a strong dependency of the data on the tip condition.

Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism.

The complexity of the water adsorption-desorption mechanism at the interface of transition metal dichalcogenides (TMDs) and its impact on their current transport are not yet fully understood. Here, our work investigates the swift intercalation of atmospheric adsorbates at the TMD and sapphire interface and between two TMD monolayers and probes its influence on their electrical properties. The adsorbates consist mainly of hydroxyl-based (OH) species in the subsurface region suggesting persistent water intercalation even under vacuum conditions, as determined by time-of-flight-secondary ion mass spectrometry (ToF-SIMS) and scanning tunneling microscopy (STM).

Interfacial Conductivity Enhancement and Pore Confinement Conductivity-Lowering Behavior inside the Nanopores of Solid Silica-gel Nanocomposite Electrolytes.

Solid nanocomposite electrolytes (nano-SCEs) that exhibit higher ionic conductivity than the individual confined electrolyte were investigated for high-performance solid-state batteries. Understanding the behavior of Li-ion conduction through the pores is important to design ideal nanoporous structures for nano-SCEs, which are composed of an ionic liquid electrolyte (ILE) in a highly porous (∼90%) silica matrix. To establish the relationship between the pore structure of the silica matrix and the ionic conductivity of the solid nanocomposite, the liquid electrolyte fraction was successfully extracted from the nano-SCE to reveal the fragile porous silica matrix.

Crystalline defect analysis in epitaxial SiGe layer using site-specific ECCI-STEM.

Electron channeling contrast imaging (ECCI) is a powerful technique to characterize the structural defects present in a sample and to obtain relevant statistics about their density. Using ECCI, such defects can only be properly visualized, if the information depth is larger than the depth at which defects reside. Furthermore, a systematic correlation of the features observed by ECCI with the defect nature, confirmed by a complementary technique, is required for defect analysis.

The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements.

Scanning Spreading Resistance Microscopy is a well-established technique for obtaining quantitative two- and three-dimensional carrier profiles in semiconductor devices with sub-nm spatial resolution. However, for sub-100 nm devices, the use of focused ion beam becomes inevitable for exposing the region of interest on a sample cross section. In this work, we investigate the impact of the focused ion beam milling on spreading resistance analysis and we show that the electrical effect of the focused ion beam extends far beyond the amorphous region and depends on the dopant concentration, ion beam energy, impact angle, and current density.

Silica gel solid nanocomposite electrolytes with interfacial conductivity promotion exceeding the bulk Li-ion conductivity of the ionic liquid electrolyte filler.

The transition to solid-state Li-ion batteries will enable progress toward energy densities of 1000 W·hour/liter and beyond. Composites of a mesoporous oxide matrix filled with nonvolatile ionic liquid electrolyte fillers have been explored as a solid electrolyte option. However, the simple confinement of electrolyte solutions inside nanometer-sized pores leads to lower ion conductivity as viscosity increases.

Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations.

Nowadays electron channeling contrast imaging (ECCI) is widely used to characterize crystalline defects on blanket semiconductors. Its further application in the semiconductor industry is however challenged by the emerging rise of nanoscale 3D heterostructures. In this study, an angular multi-segment detector is utilized in backscatter geometry to investigate the application of ECCI to the defect analysis of 3D semiconductor structures such as III/V nano-ridges.

Enhancing the defect contrast in ECCI through angular filtering of BSEs.

In this study, an annular multi-segment backscattered electron (BSE) detector is used in back scatter geometry to investigate the influence of the angular distribution of BSE on the crystalline defect contrast in electron channeling contrast imaging (ECCI). The study is carried out on GaAs and Ge layers epitaxially grown on top of silicon (Si) substrates, respectively. The influence of the BSE detection angle and landing energy are studied to identify the optimal ECCI conditions.

Laser-Induced Periodic Surface Structures (LIPSS) on Heavily Boron-Doped Diamond for Electrode Applications.

Diamond is known as a promising electrode material in the fields of cell stimulation, energy storage (e.g., supercapacitors), (bio)sensing, catalysis, etc.

Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)/AlO Filamentary Switching Devices.

In this paper, we report on the use of CuInX (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in solar cells, we take advantage of the reported Cu ionic conductivity of these materials to investigate the effect of the chalcogen element on filament stability. In situ X-ray diffraction showed material stability attractive for back-end-of-line in semiconductor industry.

Mesoscopic physical removal of material using sliding nano-diamond contacts.

Wear mechanisms including fracture and plastic deformation at the nanoscale are central to understand sliding contacts. Recently, the combination of tip-induced material erosion with the sensing capability of secondary imaging modes of AFM, has enabled a slice-and-view tomographic technique named AFM tomography or Scalpel SPM. However, the elusive laws governing nanoscale wear and the large quantity of atoms involved in the tip-sample contact, require a dedicated mesoscale description to understand and model the tip-induced material removal.

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films.

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped diamond, to date there is very limited knowledge of the wear properties of highly B-doped diamond. Therefore, in this work a comprehensive investigation of the wear behavior of highly B-doped diamond is presented.

Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts.

The three-dimensional (3D) distribution of carbon nanotubes (CNTs) grown inside semiconductor contact holes is studied by electron tomography. The use of a specialized tomography holder results in an angular tilt range of +/-90 degrees , which means that the so-called "missing wedge" is absent. The transmission electron microscopy (TEM) sample for this purpose consists of a micropillar that is prepared by a dedicated procedure using the focused ion beam (FIB) but keeping the CNTs intact.

TEM sample preparation by FIB for carbon nanotube interconnects.

A powerful method to study carbon nanotubes (CNTs) grown in patterned substrates for potential interconnects applications is transmission electron microscopy (TEM). However, high-quality TEM samples are necessary for such a study. Here, TEM specimen preparation by focused ion beam (FIB) has been used to obtain lamellae of patterned samples containing CNTs grown inside contact holes.

The evolution of pseudo-spherical silicon nanocrystals to tetrahedra, mediated by phosphonic acid surfactants.

Silicon nanocrystals were synthesized at high temperatures and high pressures by the thermolysis of diphenylsilane using a combination of supercritical carbon dioxide and phosphonic acid surfactants. Size and shape evolution from pseudo-spherical silicon nanocrystals to well-faceted tetrahedral-shaped silicon crystals with edge lengths in the range of 30-400 nm were observed with sequentially decreasing surfactant chain lengths. The silicon nanocrystals were characterized by transmission electron microscopy (TEM), energy-dispersive x-ray spectroscopy (EDX), x-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering spectroscopy.

Intracellular calcium waves in bone cell networks under single cell nanoindentation.

In this study, bone cells were successfully cultured into a micropatterned network with dimensions close to that of in vivo osteocyte networks using microcontact printing and self-assembled monolyers (SAMs). The optimal geometric parameters for the formation of these networks were determined in terms of circle diameters and line widths. Bone cells patterned in these networks were also able to form gap junctions with each other, shown by immunofluorescent staining for the gap junction protein connexin 43, as well as the transfer of gap-junction permeable calcein-AM dye.