Rubidium and Cesium Ion-Induced Electron and Ion Signals for Scanning Ion Microscopy Applications.

Scanning ion microscopy applications of novel focused ion beam (FIB) systems based on ultracold rubidium (Rb) and cesium (Cs) atoms were investigated via ion-induced electron and ion yields. Results measured on the Rb+ and Cs+ FIB systems were compared with results from commercially available gallium (Ga+) FIB systems to verify the merits of applying Rb+ and Cs+ for imaging. The comparison shows that Rb+ and Cs+ have higher secondary electron (SE) yields on a variety of pure element targets than Ga+, which implies a higher signal-to-noise ratio can be achieved for the same dose in SE imaging using Rb+/Cs+ than Ga+.

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers.

GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski-Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.