Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm.

Toward athermal silicon-on-insulator (de)multiplexers in the O-band.

We report on the design, fabrication, and characterization of a 1×4 silicon-on-insulator (SOI) demultiplexer exhibiting a significant reduction of its thermo-optical sensitivity in the O-band. The optical filtering is achieved by cascading several Mach-Zehnder interferometers (MZIs) fabricated on a 300-nm-thick SOI platform. Owing to an asymmetric design of the confinement for each MZIs, we found an athermal criterium that satisfies the spectral requirements.

1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio.

We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the maximum coupled power in the silicon waveguide is 22 mW.