Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe Nanowires by Chemical Vapor Deposition.

Micron-scale single-crystal nanowires of metallic TaSe, a material that forms -Ta-Se-Ta-Se- stacks separated from one another by a tubular van der Waals (vdW) gap, have been synthesized using chemical vapor deposition (CVD) on a SiO/Si substrate, in a process compatible with semiconductor industry requirements. Their electrical resistivity was found unaffected by downscaling from the bulk to as little as 7 nm in nanowire width and height, in striking contrast to the resistivity of copper for the same dimensions. While the bulk resistivity of TaSe is substantially higher than that of bulk copper, at the nanometer scale the TaSe wires become competitive to similar-sized copper ones.

High-Vacuum Particulate-Free Deposition of Wafer-Scale Mono-, Bi-, and Trilayer Molybdenum Disulfide with Superior Transport Properties.

Wafer-scale MoS growth at arbitrary integer layer number is demonstrated by a technique based on the decomposition of carbon disulfide on a hot molybdenum filament, which yields volatile MoS precursors that precipitate onto a heated wafer substrate. Colorimetric control of the growth process allows precise targeting of any integer layer number. The method is inherently free of particulate contamination, uses inexpensive reactants without the pyrophoricity common to metal-organic precursors, and does not rely on particular gas-flow profiles.

Chemical Vapor Deposition Growth of Few-Layer MoTe in the 2H, 1T', and 1T Phases: Tunable Properties of MoTe Films.

Chemical vapor deposition allows the preparation of few-layer films of MoTe in three distinct structural phases depending on the growth quench temperature: 2H, 1T', and 1T. We present experimental and computed Raman spectra for each of the phases and utilize transport measurements to explore the properties of the 1T MoTe phase. Density functional theory modeling predicts a (semi-)metallic character.