Manipulating Dirac States in BaNiS by Surface Charge Doping.

In the Dirac semimetal BaNiS, the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO.

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to = 0.