Vertical-junction photodiodes for smaller pixels in retinal prostheses.

To restore central vision in patients with atrophic age-related macular degeneration, we replace the lost photoreceptors with photovoltaic pixels, which convert light into current and stimulate the secondary retinal neurons. Clinical trials demonstrated prosthetic acuity closely matching the sampling limit of the 100m pixels, and hence smaller pixels are required for improving visual acuity. However, with smaller flat bipolar pixels, the electric field penetration depth and the photodiode responsivity significantly decrease, making the device inefficient.

Spatiotemporal characteristics of retinal response to network-mediated photovoltaic stimulation.

Subretinal prostheses aim at restoring sight to patients blinded by photoreceptor degeneration using electrical activation of the surviving inner retinal neurons. Today, such implants deliver visual information with low-frequency stimulation, resulting in discontinuous visual percepts. We measured retinal responses to complex visual stimuli delivered at video rate via a photovoltaic subretinal implant and by visible light.

Silicon single-photon avalanche diodes with nano-structured light trapping.

Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency.

Investigation of germanium quantum-well light sources.

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells.

Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics.

Photovoltaic Pixels for Neural Stimulation: Circuit Models and Performance.

Photovoltaic conversion of pulsed light into pulsed electric current enables optically-activated neural stimulation with miniature wireless implants. In photovoltaic retinal prostheses, patterns of near-infrared light projected from video goggles onto subretinal arrays of photovoltaic pixels are converted into patterns of current to stimulate the inner retinal neurons. We describe a model of these devices and evaluate the performance of photovoltaic circuits, including the electrode-electrolyte interface.

Performance of photovoltaic arrays in-vivo and characteristics of prosthetic vision in animals with retinal degeneration.

Loss of photoreceptors during retinal degeneration leads to blindness, but information can be reintroduced into the visual system using electrical stimulation of the remaining retinal neurons. Subretinal photovoltaic arrays convert pulsed illumination into pulsed electric current to stimulate the inner retinal neurons. Since required irradiance exceeds the natural luminance levels, an invisible near-infrared (915 nm) light is used to avoid photophobic effects.

Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.

We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon.

Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon.

We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators.

We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning.

Photovoltaic Retinal Prosthesis with High Pixel Density.

Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables.

Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport.

Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.

Lateral, Ge, nanowire growth on SiO2.

Vapor-liquid-solid (VLS) nanowires (NWs) typically grow in [111] directions. Previously, the authors have demonstrated guided Si NW growth, engineering the VLS NWs to grow in a [110] direction against a SiO(2) surface. In this work, the authors demonstrate guided high-quality Ge nanowire growth against a SiO(2) surface in the substrate plane to bridge between two Si mesas.

Guiding vapor-liquid-solid nanowire growth using SiO2.

Vapor-liquid-solid (VLS) grown nanowires (NWs) typically grow in [Formula: see text] directions. In this work, using guiding structures, we effectively grow Si NWs with diameters between 20 and 100 nm in both [001] and <110> directions by guiding the Si NW growth using SiO(2) surfaces. Using one structure, we demonstrate NW growth in the substrate plane, against the buried oxide layer of a standard, (001) silicon-on-insulator wafer.

Integratable nanowire transistors.

We report a structure to control nanowire location and growth direction and demonstrate top-gated, metal-oxide-semiconductor, field-effect transistors (MOSFETs) using this structure. The nanowires wereengineered to grow against an oxide surface of a (001), silicon-on-insulator substrate, enabling straightforward fabrication of MOSFETs exhibiting an Io/Ioff ratio approximately 104 and a subthreshold slope of approximately 155 mV/decade. Though nanowires were engineered to grow in (110) directions, the nanowires still grew by the addition of {111) planes.

Single-crystal, Si nanotubes, and their mechanical resonant properties.

Single-crystalline Si nanotubes (NTs) were fabricated using vapor-liquid-solid grown, Ge nanowires (NWs) as a template upon which a Si shell was deposited to first grow Ge-core, Si-shell NWs. The tips of these NWs were removed, enabling exposure of the Ge core to H(2)SO(4) and H(2)O(2). After removing the Ge core, single-crystalline Si NTs remained.

An organic/Si nanowire hybrid field configurable transistor.

We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg4I5) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning.

Optical modulator on silicon employing germanium quantum wells.

We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm.

Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires.

Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si nanowires (NWs) grown by chemical vapor deposition from TiSi2 catalyst sites. NWs grown with average diameter of 20 nm were etched and oxidized to thin and passivate the wires. The PL emission blue shifted continuously with decreasing nanowire diameter.

A generalized description of the elastic properties of nanowires.

We report a model of nanowire (NW) mechanics that describes force vs displacement curves over the entire elastic range for diverse wire systems. Due to the clamped-wire measurement configuration, the force response in the linear elastic regime can be linear or nonlinear, depending on the system and the wire displacement. For Au NWs the response is essentially linear since yielding occurs prior to the onset of the inherent nonlinearity, while for Si NWs the force response is highly nonlinear, followed by brittle fracture.

Strong quantum-confined Stark effect in germanium quantum-well structures on silicon.

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length.