Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications.

Functional thin films are commonly integrated in electronic devices as part of a multi-layer architecture. Metal/oxide/metal structures e.g.

Inkjet Printed Y-Substituted Barium Zirconate Layers as Electrolyte Membrane for Thin Film Electrochemical Devices.

In this work, the inkjet printing of proton conducting Y-substituted barium zirconate (BZY) thin films was studied. Two different kinds of precursor inks, namely a rather molecular BZY precursor solution and a BZY nanoparticle dispersion, have been synthesized and initially investigated with regard to their decomposition and phase formation behavior by thermal analysis, X-ray diffraction, and scanning electron microscopy. Their wetting behavior and rheological properties have been determined in order to evaluate their fundamental suitability for the inkjet process.

Local atomic structure of thin and ultrathin films rapid high-energy X-ray total scattering at grazing incidence.

Atomic pair distribution function (PDF) analysis is the most powerful technique to study the structure of condensed matter on the length scale from short- to long-range order. Today, the PDF approach is an integral part of research on amorphous, nanocrystalline and disordered materials from bulk to nanoparticle size. Thin films, however, demand specific experimental strategies for enhanced surface sensitivity and sophisticated data treatment to obtain high-quality PDF data.

Sr diffusion in undoped and La-doped SrTiO3 single crystals under oxidizing conditions.

Strontium titanate SrTiO3(100), (110), and (111) single crystals, undoped or donor doped with up to 1 at% La, were isothermally equilibrated at temperatures between 1523 and 1773 K in synthetic air followed by two different methods of Sr tracer deposition: ion implantation of 87Sr and chemical solution deposition of a thin 86SrTiO3 layer. Subsequently, the samples were diffusion annealed under the same conditions as before. The initial and final depth profiles were measured by SIMS.

Theoretical calculations and performance results of a PZT thin film actuator.

High piezoelectric coupling coefficients of PZT-based material systems can be employed for actuator functions in micro-electro-mechanical systems (MEMS) offering displacements and forces which outperform standard solutions. This paper presents simulation, fabrication, and development results of a stress-compensated, PZT-coated cantilever concept in which a silicon bulk micromachining process is used in combination with a chemical solution deposition (CSD) technique. Due to an analytical approach and a finite element method (FEM) simulation for a tip displacement of 10 microm, the actuator was designed with a cantilever length of 300 microm to 1000 microm.

Synthesis of Polysiloxane-Bound (Ether-phosphine)palladium Complexes. Stoichiometric and Catalytic Reactions in Interphases(1).

The reaction of two equiv of the monomeric ether-phosphine O,P ligand (MeO)(3)Si(CH(2))(3)(Ph)PCH(2)-Do [1a(T(0)()), 1b(T(0)())] {Do = CH(2)OCH(3) [1a(T(0)())], CHCH(2)CH(2)CH(2)O [1b(T(0)())]} with PdCl(2)(COD) yields the monomeric palladium(II) complexes Cl(2)Pd(P approximately O)(2) [2a(T(0)())(2)(), 2b(T(0)())(2)()]. The compounds 2a(T(0)())(2)() and 2b(T(0)())(2)() are sol-gel processed with variable amounts (y) of Si(OEt)(4) (Q(0)()) to give the polysiloxane-bound complexes 2a(T(n)())(2)()(Q(k)())(y)(), 2b(T(n)())(2)()(Q(k)())(y)() (Table 1) {P approximately O = eta(1)-P-coordinated ether-phosphine ligand; for T(n)() and Q(k)(), y = number of condensed T type (three oxygen neighbors), Q type (four oxygen neighbors) silicon atoms; n and k = number of Si-O-Si bonds; n = 0-3; k = 0-4; 2a(T(n)())(2)()(Q(k)())(y)(), 2b(T(n)())(2)()(Q(k)())(y)() = {[M]-SiO(n)()(/2)(OX)(3)(-)(n)()}(2)[SiO(k)()(/2)(OX)(4)(-)(k)()](y)(), [M] = (Cl(2)Pd)(1/2)(Ph)P(CH(2)Do)(CH(2))(3)-, X = H, Me, Et}. The complexes 2b(T(n)())(2)()(Q(k)())(y)() (y = 4, 12, 36) show high activity and selectivity in the hydrogenation of 1-hexyne and tolan.