Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer.

The effect of polarization-matched Al(0.25)In(0.08)Ga(0.

Performance and optical characteristic of InGaN MQWs laser diodes.

The performance of the InGaN multi-quantum wells (MQWs) laser diode structures has been numerically investigated by using ISE TCAD software. We investigated the effect of well numbers, barrier thickness and barrier doping on the output power, threshold current, and slope efficiency. All material parameters used in the model are evaluated based on the recent literature values.