Simultaneous fast XAS/SAXS measurements in an energy-dispersive mode.

X-ray absorption spectroscopy (XAS) and small-angle X-ray scattering (SAXS) are common materials characterization tools at synchrotron radiation facilities used in many research fields. Since XAS can provide element-specific chemical states and local atomic structures and SAXS can provide nano-scale structural information, their complementary use is advantageous for a comprehensive understanding of multiscale phenomena. This paper presents a new method for simultaneous XAS/SAXS measurements with synchrotron radiation.

Drastic Reduction of the Solid Electrolyte-Electrode Interface Resistance via Annealing in Battery Form.

The origin of electrical resistance at the interface between the positive electrode and solid electrolyte of an all-solid-state Li battery has not been fully determined. It is well known that the interface resistance increases when the electrode surface is exposed to air. However, an effective method of reducing this resistance has not been developed.

Tuning the Schottky Barrier Height at the Interfaces of Metals and Mixed Conductors.

Understanding electronic and ionic transport across interfaces is crucial for designing high-performance electric devices. The adjustment of work functions is critical for band alignment at the interfaces of metals and semiconductors. However, the electronic structures at the interfaces of metals and mixed conductors, which conduct both electrons and ions, remain poorly understood.

Clean Solid-Electrolyte/Electrode Interfaces Double the Capacity of Solid-State Lithium Batteries.

Solid-state lithium (Li) batteries using spinel-oxide electrode materials such as LiNiMnO are promising power supplies for mobile devices and electric vehicles. Here, we demonstrate stable battery cycling between the LiNiMnO and LiNiMnO phases with working voltages of approximately 2.9 and 4.

Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains.

Low-dimensional van der Waals materials have been extensively studied as a platform with which to generate quantum effects. Advancing this research, topological quantum materials with van der Waals structures are currently receiving a great deal of attention. Here, we use the concept of designing topological materials by the van der Waals stacking of quantum spin Hall insulators.

Atomically Well-Ordered Structure at Solid Electrolyte and Electrode Interface Reduces the Interfacial Resistance.

Using synchrotron surface X-ray diffraction, we investigated the atomic structures of the interfaces of a solid electrolyte (LiPO) and electrode (LiCoO). We prepared two types of interfaces with high and low interface resistances; the low-resistance interface exhibited a flat and well-ordered atomic arrangement at the electrode surface, whereas the high-resistance interface showed a disordered interface. These results indicate that the crystallinity of LiCoO at the interface has a significant impact on interface resistance.

Large-Gap Magnetic Topological Heterostructure Formed by Subsurface Incorporation of a Ferromagnetic Layer.

Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures.

A quick convergent-beam laboratory X-ray reflectometer using a simultaneous multiple-angle dispersive geometry.

An X-ray reflectometer using a laboratory X-ray source for quick measurements of the specular X-ray reflectivity curve is presented. It uses a bent-twisted crystal to monochromatize and focus the diverging X-rays (Cu α) from a laboratory point source onto the sample. The reflected X-rays are recorded with a two-dimensional detector.

Nonvortical Rashba Spin Structure on a Surface with C_{1h} Symmetry.

A totally anisotropic peculiar Rashba-Bychkov (RB) splitting of electronic bands was found on the Tl/Si(110)-(1×1) surface with C_{1h} symmetry by angle- and spin-resolved photoelectron spectroscopy and first-principles theoretical calculation. The constant energy contour of the upper branch of the RB split band has a warped elliptical shape centered at a k point located between Γ[over ¯] and the edge of the surface Brillouin zone, i.e.

Identification of the structure model of the Si(111)-(5 × 2)-Au surface.

The atomic structure of the Si(111)-(5 × 2)-Au surface, a periodic gold chain on the silicon surface, has been a long-debated issue in surface science. The recent three candidates, the so-called Erwin-Barke-Himpsel (EBH) model [S. C.

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface.

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure.

Electron-beam-induced disordering of the Si(001)-c(4 x 2) surface structure.

An electron beam (EB) irradiation effect on the Si(001)-c(4 x 2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below approximately 40 K, indicating a disordering in the c(4 x 2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at various conditions of beam current, beam energy, and substrate temperature leads to a proposal for a mechanism of the disordering in the buckled-dimer arrangement in terms of electronic excitation, electron-phonon coupling, and carrier concentration.