Publications by authors named "Tetsuo Kodera"

Electron flying qubits are envisioned as potential information links within a quantum computer, but also promise-like photonic approaches-to serve as self-standing quantum processing units. In contrast to their photonic counterparts, electron-quantum-optics implementations are subject to Coulomb interactions, which provide a direct route to entangle the orbital or spin degree of freedom. However, controlled interaction of flying electrons at the single-particle level has not yet been established experimentally.

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We propose and define a reservoir offset voltage as a voltage commonly applied to both reservoirs of a quantum dot and study the functions in p-channel Si quantum dots. By the reservoir offset voltage, the electrochemical potential of the quantum dot can be modulated. In addition, when quantum dots in different channels are capacitively coupled, the reservoir offset voltage of one of the QDs can work as a gate voltage for the others.

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We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio.

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Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose a practical 3 × 3 quantum dot device design and a larger-scale design as a longer-term target.

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Radio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator.

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The emergence of quantum technologies is heating up the debate on quantum supremacy, usually focusing on the feasibility of looking good on paper algorithms in realistic settings, due to the vulnerability of quantum systems to myriad sources of noise. In this vein, an interesting example of quantum pseudo-telepathy games that quantum mechanical resources can theoretically outperform classical resources is the Magic Square game (MSG), in which two players play against a referee. Due to noise, however, the unit winning probability of the players can drop well below the classical limit.

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Preparing large-scale multi-partite entangled states of quantum bits in each physical form such as photons, atoms or electrons for each specific application area is a fundamental issue in quantum science and technologies. Here, we propose a setup based on Pauli spin blockade (PSB) for the preparation of large-scale W states of electrons in a double quantum dot (DQD). Within the proposed scheme, two W states of n and m electrons respectively can be fused by allowing each W state to transfer a single electron to each quantum dot.

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Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters, and therefore, its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by radio frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot.

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Nanostructured dopant-based silicon (Si) transistors are promising candidates for high-performance photodetectors and quantum information devices. For highly doped Si with donor bands, the energy depth of donor levels and the energy required for tunneling processes between donor levels are typically on the order of millielectron volts, corresponding to terahertz (THz) photon energy. Owing to these properties, highly doped Si quantum dots (QDs) are highly attractive as THz photoconductive detectors.

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The isolation of qubits from noise sources, such as surrounding nuclear spins and spin-electric susceptibility , has enabled extensions of quantum coherence times in recent pivotal advances towards the concrete implementation of spin-based quantum computation. In fact, the possibility of achieving enhanced quantum coherence has been substantially doubted for nanostructures due to the characteristic high degree of background charge fluctuations . Still, a sizeable spin-electric coupling will be needed in realistic multiple-qubit systems to address single-spin and spin-spin manipulations .

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Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time).

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We report the growth of germanium nanowires (Ge NWs) with single-step temperature method via vapour-liquid-solid (VLS) mechanism in the low pressure chemical vapour deposition (CVD) reactor at 300 degrees C, 280 degrees C, and 260 degrees C. The catalyst used in our experiment was Au nanoparticles with equivalent thicknesses of 0.1 nm (average diameter approximately 3 nm), 0.

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