Biotic and Abiotic Interactions in Freshwater Mesocosms Determine Fate and Toxicity of CuO Nanoparticles.

Transformation, dissolution, and sorption of copper oxide nanoparticles (CuO-NP) play an important role in freshwater ecosystems. We present the first mesocosm experiment on the fate of CuO-NP and the dynamics of the zooplankton community over a period of 12 months. Increasingly low (0.

Ion compositions in artificial media control the impact of humic acid on colloidal behaviour, dissolution and speciation of CuO-NP.

The toxicity of copper oxide nanoparticles (CuO-NP) strongly depends on their interactions with the surrounding environment, impacting their dissolution and colloidal stability. This behaviour is studied quite extensively for simplified electrolytes, but information on the behaviour of CuO-NP in more complex artificial media are lacking. In our study, we analysed the colloidal behaviour and considered the speciation of CuO-NP in pure water and three artificial media of different complexity which are used in ecotoxicology.

Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods.

GaN microrods are used as a basis for subsequent InGaN quantum well (QW) and quantum dot deposition by metal-organic vapor phase epitaxy. The coverage of the shell along the sidewall of rods is dependent on the rod growth time and a complete coverage is obtained for shorter rod growth times. Transmission electron microscopy measurements are performed to reveal the structural properties of the InGaN layer on the sidewall facet and on the top facet.

Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed.

Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy.

Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal-organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the nanorods indicate a self-catalytic vapor-liquid-solid growth mode. A systematic study on important growth parameters has been carried out for the optimization of nanorod morphology.

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100).

Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques.

High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence.

Ultrafast Dynamics of Lasing Semiconductor Nanowires.

Semiconductor nanowire lasers operate at ultrafast timescales; here we report their temporal dynamics, including laser onset time and pulse width, using a double-pump approach. Wide bandgap gallium nitride (GaN), zinc oxide (ZnO), and cadmium sulfide (CdS) nanowires reveal laser onset times of a few picoseconds, driven by carrier thermalization within the optically excited semiconductor. Strong carrier-phonon coupling in ZnO leads to the fastest laser onset time of ∼1 ps in comparison to CdS and GaN exhibiting values of ∼2.

High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy.

Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets.

Composition mapping in InGaN by scanning transmission electron microscopy.

We suggest a method for chemical mapping that is based on scanning transmission electron microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The analysis method uses a comparison of intensity normalized with respect to the incident electron beam with intensity calculated employing the frozen lattice approximation. This procedure is validated with an In(0.

Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K.

We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K.