Engineered Heusler Ferrimagnets with a Large Perpendicular Magnetic Anisotropy.

Synthetic perpendicular magnetic anisotropy (PMA) ferrimagnets consisting of 30-nm-thick D0-MnGa and Co₂MnSi (CMS) cubic Heusler alloys with different thicknesses of 1, 3, 5, 10 and 20 nm, buffered and capped with a Cr film, are successfully grown epitaxially on MgO substrate. Two series samples with and without post annealing at 400 °C are fabricated. The (002) peak of the cubic L2₁ structure of CMS films on the MnGa layer is observed, even for the 3-nm-thick CMS film for both un-annealed and annealed samples.

Magnetoresistance effect in rubrene-based spin valves at room temperature.

We fabricate spin-valve devices with an Fe3O4/AlO/rubrene/Co stacking structure. Their magnetoresistance (MR) effects at room temperature and low temperatures are systemically investigated based on the measurement of MR curves, current-voltage response, etc. A large MR ratio of approximately 6% is achieved at room temperature, which is one of the highest MR ratios reported to date in organic spin valves.

Observation of a large spin-dependent transport length in organic spin valves at room temperature.

The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin-orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C(60) as the spacer layer.