Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer and GaN.

A promising approach for high speed and high power electronics is to integrate two-dimensional (2D) materials with conventional electronic components such as bulk (3D) semiconductors and metals. In this study we explore a basic integration step of inserting a single monolayer () inside a -GaN junction and elucidate how it impacts the structural and electrical properties of the junction. Epitaxial in the form of 1-2 m triangle domains are grown by powder vaporization on a -doped GaN substrate, and the Au capping layer is deposited by evaporation.

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device.

Electrical transport properties of polycrystalline monolayer molybdenum disulfide.

Semiconducting MoS2 monolayers have shown many promising electrical properties, and the inevitable polycrystallinity in synthetic, large-area films renders understanding the effect of structural defects, such as grain boundaries (GBs, or line-defects in two-dimensional materials), essential. In this work, we first examine the role of GBs in the electrical-transport properties of MoS2 monolayers with varying line-defect densities. We reveal a systematic degradation of electrical characteristics as the line-defect density increases.