Roll-to-roll printed resistive WORM memory on a flexible substrate.

The fabrication process and the operation characteristics of a fully roll-to-roll printed resistive write-once-read-many memory on a flexible substrate are presented. The low-voltage (<10 V) write operation of the memories from a high resistivity '0' state to a low resistivity '1' state is based on the rapid electrical sintering of bits containing silver nanoparticles. The bit ink is formulated by mixing two commercially available silver nanoparticle inks in order to tune the initial square resistance of the bits and to create a self-organized network of percolating paths.