Publications by authors named "Tereshchenko O"

Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) [Formula: see text] have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10% to 75%. It was shown that when Ge concentration increases, the bulk band gap decreases and reaches zero plateau in the concentration range of 45-60% while trivial surface states (TrSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40%.

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Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in BiTe and BiSbTeSe (BSTS) thin films was investigated. At photon energies () of 1.

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Article Synopsis
  • * The researchers explore enhancing efficiency by using measurement informatics, specifically Gaussian process regression (GPR) to optimize the collection of spin polarization data.
  • * Their findings indicate that the GPR score can effectively be used as a stopping criterion, allowing for significant time savings of 5-10 times compared to traditional methods in conducting spin-resolved ARPES experiments.
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Low-energy (0-14 eV) resonance electron interaction and fragment species produced by dissociative electron attachment (DEA) for enantiomeric forms of glutamic acid (Glu) are studied under gas-phase conditions by means of DEA spectroscopy and density functional theory calculations. Contrary to a series of amino acids studied earlier employing the DEA technique, the most abundant species are not associated with the elimination of a hydrogen atom from the parent molecular negative ion. Besides this less intense closed-shell [Glu - H]- fragment, only two mass-selected negative ions, [Glu - 19]- and [Glu - 76]-, are detected within the same electron energy region, with the yield maximum observed at around 0.

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BSTS epitaxial thin film topological insulators were grown using the MBE technique on two different types of substrates , Si (111) and SiC/graphene with BiSbTeSe and BiSbTeSe, respectively. The crystallographic properties of BSTS films were investigated X-ray diffraction, which showed the strongest reflections from the (0 0 ) facets corresponding to the rhombohedral phase. Superior epitaxial growth, homogeneous thickness, smooth surfaces, and larger unit cell parameters were observed for the films grown on the Si substrate.

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  • * Comprehensive techniques like scanning tunneling microscopy and X-ray photoelectron spectroscopy confirm the stability and unique electronic properties of Bi films, including a significant spin-split state at the Fermi level.
  • * The findings suggest that the Bi/InAs(111)A interface can serve as a high-performance material for spintronics, particularly in the realm of two-dimensional materials.
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One of the approaches to manipulate MnBi2Te4 properties is the magnetic dilution, which inevitably affects the interplay of magnetism and band topology in the system. In this work, we carried out angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations for analysing changes in the electronic structure of Mn1-xGexBi2Te4 that occur under parameter x variation. We consider two ways of Mn/Ge substitution: (i) bulk doping of the whole system; (ii) surface doping of the first septuple layer.

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We study the electronic structure of the ferromagnetic spinel HgCr_{2}Se_{4} by soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) and first-principles calculations. While a theoretical study has predicted that this material is a magnetic Weyl semimetal, SX-ARPES measurements give direct evidence for a semiconducting state in the ferromagnetic phase. Band calculations based on the density functional theory with hybrid functionals reproduce the experimentally determined band gap value, and the calculated band dispersion matches well with ARPES experiments.

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Strong light fields have created opportunities to tailor novel functionalities of solids. Floquet-Bloch states can form under periodic driving of electrons and enable exotic quantum phases. On subcycle timescales, lightwaves can simultaneously drive intraband currents and interband transitions, which enable high-harmonic generation and pave the way towards ultrafast electronics.

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We study ultrafast population dynamics in the topological surface state of Sb[Formula: see text]Te[Formula: see text] in two-dimensional momentum space with time- and angle-resolved two-photon photoemission spectroscopy. Linearly polarized mid-infrared pump pulses are used to permit a direct optical excitation across the Dirac point. We show that this resonant excitation is strongly enhanced within the Dirac cone along three of the six [Formula: see text]-[Formula: see text] directions and results in a macroscopic photocurrent when the plane of incidence is aligned along a [Formula: see text]-[Formula: see text] direction.

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Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL).

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  • The study focuses on analyzing the oxidation behaviors of beryllium/aluminum multilayers using depth-resolved X-ray photoelectron spectroscopy.
  • The findings highlight the complexities of oxidation in these materials, which can impact their performance in various applications.
  • The paper contributes valuable insights to the understanding of surface chemistry and material stability in multilayer systems.
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  • The research examined how exposure to the atmosphere affects the oxidation of Be/Al multilayer mirrors using depth-resolved X-ray photoelectron spectroscopy.
  • A thicker layer of aluminum reduced the oxidation levels because it was less reactive, as revealed by the intensity ratio of metal to oxides.
  • The analysis highlighted that the subsurface areas contained more metal-hydroxide bonds (BeOH/AlOH), while the surface regions were primarily composed of metal-oxide bonds (BeO/AlO).
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Magnetic topological insulators (MTIs) have recently become a subject of poignant interest; among them, Z topological insulators with magnetic moment ordering caused by embedded magnetic atoms attract special attention. In such systems, the case of magnetic anisotropy perpendicular to the surface that holds a topologically nontrivial surface state is the most intriguing one. Such materials demonstrate the quantum anomalous Hall effect, which manifests itself as chiral edge conduction channels that can be manipulated by switching the polarization of magnetic domains.

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New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na_{2}KSb/Cs_{3}Sb heterostructure is designed as a spin-polarized electron source in combination with the Al_{0.11}Ga_{0.

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Recently discovered intrinsic magnetic topological insulators (IMTIs) constitute a unique class of quantum materials that combine magnetism and nontrivial topology. One of the most promising applications of these materials is Majorana fermion creation; Majorana fermions are expected to arise when a superconductor is in contact with the surface of an IMTI. Here we study the adsorption of Pb ultrathin films on top of IMTIs of various stoichiometries.

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Microstructural properties of the beryllium (Be) and silicon (Si) in periodic multilayer mirrors Be/Si with the variation of film thickness were comprehensively determined by Raman scattering. For the thinner films, the structure of Be evolved in the amorphous phase, and it was transformed into the polycrystalline phase for thicker films. The Si films in the periodic structure were condensed into the amorphous phase.

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The elastic and viscous properties of lyotropic chromonic liquid crystals have a very sharp, often exponential temperature dependence. Self-propelled bacteria swimming in this viscoelastic medium induce director deformations which can strongly influence their velocity, and we study the temperature behavior of their motility in the whole range of the nematic phase. We observe experimentally that, with increasing temperature, while the viscosity drops exponentially and the frequency of the flagellum rotation grows linearly, the swimmers' speed first conventionally increases but then, above some crossover temperature, slows down and at the same time bacteria-induced director distortions become visible.

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Article Synopsis
  • The study explores the effects of V doping in the semiconductor BiTeI, which is significant for spintronics and quantum computing due to its strong spin-orbit coupling and ferromagnetic properties.
  • Using angle-resolved photoemission spectroscopy (ARPES), it is found that the Kramers point (KP) gap varies non-monotonically with V concentration, increasing up to 3% doping before decreasing again.
  • The research indicates that the change in KP gap and saturation magnetisation is linked to the antiferromagnetic coupling of magnetic impurities at higher doping levels, affecting the overall magnetic moment and gap characteristics.
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When intense lightwaves accelerate electrons through a solid, the emerging high-order harmonic (HH) radiation offers key insights into the material. Sub-optical-cycle dynamics-such as dynamical Bloch oscillations, quasiparticle collisions, valley pseudospin switching and heating of Dirac gases-leave fingerprints in the HH spectra of conventional solids. Topologically non-trivial matter with invariants that are robust against imperfections has been predicted to support unconventional HH generation.

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The concept of an imaging-type 3D spin detector, based on the combination of spin-exchange interactions in the ferromagnetic (FM) film and spin selectivity of the electron-photon conversion effect in a semiconductor heterostructure, is proposed and demonstrated on a model system. This novel multichannel concept is based on the idea of direct transfer of a 2D spin-polarized electron distribution to image cathodoluminescence (CL). The detector is a hybrid structure consisting of a thin magnetic layer deposited on a semiconductor structure allowing measurement of the spatial and polarization-dependent CL intensity from injected spin-polarized free electrons.

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The experimental evidence of the influence of the structural phase transition on the elastic and optoelectronic properties of CHNHPbIsingle crystals has been reported. A peak in the attenuation for longitudinal and shear ultrasonic waves and a step-like anomaly in their velocity have been found near the structural the orthorhombic-to-tetragonal phase transition (160 K). The narrow hysteresis observed in the temperature dependences of the elastic properties confirms that this is the first-order phase transition.

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The circularly polarized cathodoluminescence (CL) technique has been used to study the free spin-polarized electron injection in semiconductor heterostructures with quantum wells (QWs). A polarized electron beam was created by the emission of optically oriented electrons from the p-GaAs(Cs,O) negative electron affinity (NEA) photocathode. The prepared beam was injected in a semiconductor QW target, which was activated by cesium and oxygen to reduce the work function.

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Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSbTe is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSbTe can be viewed as a 3D analogue of graphene.

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Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field.

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