Opto-impedance spectroscopy and equivalent circuit analyses of AC powder electroluminescent devices.

High energy photons can affect the dielectric response of AC powder electroluminescent devices (ACPELDs). In this paper, electroluminescent (EL), phosphor and dielectric films are photo-excited at peak wavelengths of 399 nm, 520 nm and 625 nm to identify the dielectric relaxation processes occurring in ACPELDs. The 399 nm illumination changes the frequency-dependent dielectric responses of both EL and phosphor films due to the photo-induced excitation of ZnS:Cu,Al phosphor particles.

Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells.

We have investigated the impact of CuZnSnS-Molybdenum (Mo) interface quality on the performance of sputter-grown CuZnSnS (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoS) interfacial layer is observed in sputter grown CZTS films after sulphurization.

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3.