Electrical Characteristics of Ge/Si-Based Source Pocket Tunnel Field-Effect Transistors.

Two types of Ge/Si-based novel tunnel field-effect transistors (TFETs) with source pockets are proposed. In the proposed Ge/Si-based TFETs, the materials in the source, channel, and drain are Ge, Si, and Si, respectively, and the gate shortly overlaps the source. One of the proposed TFETs has an intrinsic Ge pocket and the other has an intrinsic Si pocket, shallowly doped in the source region below the source-overlapped gate.