A wide-angle X-ray scattering laboratory setup for tracking phase changes of thin films in a chemical vapor deposition chamber.

The few-layer transition metal dichalcogenides (TMD) are an attractive class of materials due to their unique and tunable electronic, optical, and chemical properties, controlled by the layer number, crystal orientation, grain size, and morphology. One of the most commonly used methods for synthesizing the few-layer TMD materials is the chemical vapor deposition (CVD) technique. Therefore, it is crucial to develop in situ inspection techniques to observe the growth of the few-layer TMD materials directly in the CVD chamber environment.

Correction: Tuning the charge carrier mobility in few-layer PtSe films by Se : Pt ratio.

[This corrects the article DOI: 10.1039/D1RA04507E.].

Tuning the charge carrier mobility in few-layer PtSe films by Se : Pt ratio.

Recently, few-layer PtSe films have attracted significant attention due to their properties and promising applications in high-speed electronics, spintronics and optoelectronics. Until now, the transport properties of this material have not reached the theoretically predicted values, especially with regard to carrier mobility. In addition, it is not yet known which growth parameters (if any) can experimentally affect the carrier mobility value.

Optical Characterization of Few-Layer PtSe Nanosheet Films.

Thin films of transition-metal dichalcogenides are potential materials for optoelectronic applications. However, the application of these materials in practice requires knowledge of their fundamental optical properties. Many existing methods determine optical constants using predefined models.